Wide area radio frequency plasma apparatus for processing multiple substrates

Abstract

An antenna array for a radio frequency plasma process chamber including, an array of electrodes, an array of dielectric tubes concentrically disposed about each electrode tube to define a chamber configured to be at atmospheric pressure between an outer surface of each electrode tube and an inner surface of the corresponding dielectric tube, and a hermetic seal between each dielectric tube and the plasma process chamber configured to allow a vacuum or low pressure environment in the plasma process chamber.

1 . An antenna array for a radio frequency plasma process chamber comprising:
 at least one conductor segment comprising first and second linear portions and an arcuate portion coupling the first linear portion to the second linear portion.   
     
     
         2 . The antenna array of  claim 1 , wherein the first and second linear portions are in sliding engagement with a sidewall opening of the radio frequency plasma process chamber so as to provide sliding engagement of the at least one conductor segment relative to the radio frequency plasma process chamber. 
     
     
         3 . The antenna array of  claim 1 , wherein the at least one conductor segment comprises a dielectric tube concentrically disposed and spaced about a metal electrode. 
     
     
         4 . The antenna array of  claim 3 , wherein the space between the dielectric tube concentrically disposed and spaced about the metal electrode is filled with a fluid. 
     
     
         5 . The antenna array of  claim 3 , wherein the dielectric tube is a non-electrically conducting coating applied to the outer surface of the metal electrode. 
     
     
         6 . The antenna array of  claim 3 , wherein the metal electrode is an electrically conducting coating applied to the inner surface of the dielectric tube. 
     
     
         7 . The antenna array of  claim 1 , wherein the at least one conductor segment is hermetically sealed relative to the radio frequency plasma process chamber to allow a vacuum or low pressure environment in the radio frequency plasma process chamber 
     
     
         8 . A plasma generating apparatus for processing at least one substrate, the apparatus comprising:
 a gas source;   a process chamber adapted to process the at least one substrate disposed therein, the process chamber having a top wall, a bottom wall and sidewalls extending therebetween, the top wall including one or more openings in fluid communication with the gas source;   an antenna array intermediate the one or more openings and the at least one substrate; the antenna array comprising at least one conductor segment comprising first and second linear portions and an arcuate portion coupling the first linear portion to the second linear portion; and   a power source in electrical communication with the antenna array.   
     
     
         9 . The plasma generating apparatus of  claim 8 , wherein the at least one conductor segment comprises an electrode and a dielectric material concentrically disposed and spaced apart from the electrode, wherein the dielectric material is hermetically sealed at each end against the sidewalls of the process chamber 
     
     
         10 . The plasma generating apparatus of  claim 8 , wherein the at least one conductor segment comprising the first and second linear portions and the arcuate portion is serially connected to each additional conductor segment. 
     
     
         11 . The plasma generating apparatus of  claim 8 , wherein the first and second linear portions of the at least one conductor segment are slideably disposed in the sidewall. 
     
     
         12 . The plasma generating apparatus of  claim 9 , wherein the electrode is a tube. 
     
     
         13 . The plasma generating apparatus of  claim 8 , wherein the at least one conductor segment is fluidly and serially coupled to a cooling tube. 
     
     
         14 . The plasma generating apparatus of  claim 8 , further comprising a capacitor at each end of the conductor segment. 
     
     
         15 . The plasma generating apparatus of  claim 8 , wherein the power source is a radio frequency power supply. 
     
     
         16 . The plasma generating apparatus of  claim 8 , wherein the antenna array is substantially planar and is oriented parallel to the substrate. 
     
     
         17 . The plasma generating apparatus of  claim 9 , wherein the electrode is formed of a copper metal and the dielectric tube is formed of a quartz metal. 
     
     
         18 . The plasma generating apparatus of  claim 7 , wherein the at least one conductor segment is direct current isolated from each additional conductor segment and disposed in series via capacitors such that the at least one conductor segment and each additional conductor segment provide a resonant circuit, with a resonant frequency substantially the same as an operating frequency. 
     
     
         19 . The plasma generating apparatus of  claim 8 , further comprising an electromechanically controlled mechanism configured to selectively turn off and turn on sections of the antenna array. 
     
     
         20 . The plasma generating apparatus  claim 8 , wherein the at least one conductor segment is hermetically sealed relative to the plasma process chamber to allow a vacuum or low pressure environment in the process chamber. 
     
     
         21 . A plasma generating apparatus for processing a substrate, the apparatus comprising:
 a gas source;   a process chamber adapted to process the substrate disposed therein, the process chamber having a top wall, a bottom wall and sidewalls extending therebetween, the top wall including one or more openings in fluid communication with the gas source;   an antenna array intermediate the one or more openings and the substrate, the antenna array comprising at least one conductor segment in sliding engagement with the sidewalls; and   a power source in electrical communication with the conductor segments.   
     
     
         22 . The plasma generating apparatus of  claim 21 , wherein the at least one conductor segment comprises first and second linear portions and an arcuate portion coupling the first linear portion to the second linear portion. 
     
     
         23 . The plasma generating apparatus of  claim 21 , wherein the at least one conductor segment comprises a dielectric tube concentrically disposed and spaced about a metal electrode. 
     
     
         24 . The plasma generating apparatus of  claim 23 , wherein a space between the dielectric tube concentrically disposed and spaced about the metal electrode is filled with a fluid. 
     
     
         25 . The antenna array of  claim 23 , wherein the dielectric tube is a non-electrically conducting coating applied to the outer surface of the metal electrode. 
     
     
         26 . The antenna array of  claim 23 , wherein the metal electrode is an electrically conducting coating applied to the inner surface of the dielectric tube. 
     
     
         27 . The plasma generating apparatus of  claim 21 , wherein the at least one conductor segment is direct current isolated from each additional conductor segment and disposed in series via capacitors such that the at least one conductor segment and each additional conductor segment provide a resonant circuit, with a resonant frequency substantially the same as an operating frequency. 
     
     
         28 . The plasma generating apparatus of  claim 21 , wherein the at least one conductor segment is hermetically sealed relative to the plasma process chamber to allow a vacuum or low pressure environment in the process chamber.