Pattern forming method, electronic device manufacturing method and electronic device

Abstract

On a film as an object of processing, a first positive photo-resist having a dense hole pattern is formed. On the first positive photo-resist, a second positive photo-resist is formed to fill each of the plurality of holes of the pattern. To the second photo-resist, an image of dark points as a bright-dark inverted image of a high-transmittance half-tone phase shift mask is projected and exposed. By the development of second photo-resist, a pattern of dots of the second photo-resist formed at portions of the dark point image are left in any of the plurality of holes of the pattern. The film as the object of processing is patterned, using the first and second photo-resists as a mask.

1 - 14 . (canceled) 
     
     
         15 . An electronic device manufactured by a method, comprising the steps of:
 forming a mask layer having a dense hole pattern with a plurality of holes positioned densely, on a film as an object of processing, by applying a first positive photo-resist;   forming a second positive photo-resist on said mask layer to fill each of said plurality of holes of said dense hole pattern;   projecting and exposing an image of dark points to said second positive photo-resist using a half-tone phase shift mask;   developing said exposed second positive photo-resist to leave a pattern of dots formed at portions of said image of dark points of said second positive photo-resist in any of said plurality of holes of the pattern of said mask layer; and   patterning said film as the object of processing, using said mask layer and said pattern of dots formed on said second positive photo-resist as a mask; wherein   said half-tone phase shift mask has a half-tone phase shift film having an opening formed at a portion of said dot pattern; and   in said step of projecting and exposing said image of dark points to said second positive photo-resist using said half-tone phase shift mask, exposure is performed such that exposure light transmitted through said half-tone phase shift mask at a region where said opening does not exist has optical intensity sufficient to dissolve said second positive photo-resist at the time of development and optical intensity of said image of dark points formed at the portion of said pattern of dots by said opening is insufficient to dissolve said second positive photo-resist at the time of development.   
     
     
         16 . The electronic device according to  claim 15 , having a film as an object of processing, wherein assuming a lattice having a plurality of longitudinal lines and a plurality of lateral lines intersecting with each other when viewed two-dimensionally, said film as the object of processing has a hole pattern at an arbitrary one of the plurality of intersections of the plurality of longitudinal lines and a plurality of lateral lines.