Semiconductor package having through electrodes that reduce leakage current and method for manufacturing the same

Abstract

A stacked semiconductor package having through electrodes that exhibit a reduced leakage current and a method of making the same are presented. The stacked semiconductor package includes a semiconductor chip, through-holes, and a current leakage prevention layer. The semiconductor chip has opposing first and second surfaces. The through-holes pass entirely through the semiconductor chip and are exposed at the first and second surfaces. A polarized part is formed on at least one of the first and second surfaces of the semiconductor chip. The through-electrodes are disposed within the through-holes. The current leakage prevention layer covers the polarized part and exposes ends of the through-electrodes.

1 . A semiconductor package comprising:
 a semiconductor chip having a first surface, a second surface that faces away from the first surface, through-holes that passes through the semiconductor chip at the first and second surfaces, and a polarized part formed on at least one of the first and second surfaces;   through-electrodes disposed within the through-holes; and   a current leakage prevention layer covering the polarized part and exposing ends of the through-electrodes.   
     
     
         2 . The semiconductor package according to  claim 1 , wherein the polarized part includes any one of a hydrophilic part and a hydrophobic part. 
     
     
         3 . The semiconductor package according to  claim 1 , wherein the polarized part contains a hydrophilic substance. 
     
     
         4 . The semiconductor package according to  claim 1 , further comprising connection members disposed on at least one of both ends of the through-electrodes. 
     
     
         5 . The semiconductor package according to  claim 4 , wherein the connection members contain solder. 
     
     
         6 . The semiconductor package according to  claim 4 , wherein the connection members include a nickel layer and a gold layer on the nickel layer. 
     
     
         7 . The semiconductor package according to  claim 4 , wherein the connection members include a copper layer and a tin-silver layer on the copper layer. 
     
     
         8 . The semiconductor package according to  claim 1 , wherein at least two semiconductor chips are stacked together by aligning together the through-electrodes of the semiconductor chips at substantially the same positions. 
     
     
         9 . The semiconductor package according to  claim 1 , further comprising an insulation layer interposed between the through-electrodes the semiconductor chip, wherein the current leakage prevention layer covers ends of the insulation layer. 
     
     
         10 . A method for manufacturing a semiconductor package, the method comprising:
 forming through-electrodes that pass through a first surface and second surface, facing away from the first surface, of the semiconductor chip;   forming first polarized parts onto ends of the through-electrodes that corresponds to at least one of the first surface and the second surface and second polarized parts onto the at least one of the first surface and the second surface excluding the first polarized parts, the second polarized parts having a polarity opposite to that of the first polarized parts;   forming a current leakage prevention layer on the second polarized parts using a current leakage prevention substance that reacts with the second polarized parts; and   forming connection members onto at least one ends of the through-electrodes.   
     
     
         11 . The method according to  claim 10 , wherein, before the step of forming the through-electrodes, the method further comprises the steps of:
 defining through-holes that pass through the first and second surfaces of the semiconductor chip; and   forming an insulation layer onto inner surfaces of the semiconductor chip which are formed by the through-holes.   
     
     
         12 . The method according to  claim 11 , wherein when forming the current leakage prevention layer, the current leakage prevention layer covers exposed ends of the insulation layer. 
     
     
         13 . The method according to  claim 10 , wherein, before the step of forming the connection members, the method further comprises removing the first polarized parts from the ends of the through-electrodes. 
     
     
         14 . The method according to  claim 10 , wherein the step of forming the connection members comprises the steps of:
 forming a nickel layer onto at least one ends of the through-electrodes; and   forming a gold layer onto the nickel layer.   
     
     
         15 . The method according to  claim 10 , wherein the step of forming the connection members comprises the steps of:
 forming a copper layer onto at least one ends of the through-electrodes; and   forming an alloy layer of tin and silver onto the copper layer.   
     
     
         16 . The method according to  claim 10 , wherein the first polarized parts contain any one of a hydrophilic substance and a hydrophobic substance, and the second polarized parts contain a remaining one of the hydrophilic substance and the hydrophobic substance. 
     
     
         17 . The method according to  claim 10 , wherein the second polarized parts contain a hydrophilic substance. 
     
     
         18 . The method according to  claim 10 , the method further comprises the step of forming additional first polarized parts onto the other ends of the through-electrodes that correspond to the first surface and additional second polarized parts, having a polarity opposite to that of the additional first polarized parts, onto the first surface excluding the additional first polarized parts.