Light emitting device

Abstract

A light emitting device according to the embodiment includes a first conductive semiconductor layer; an active layer under the first conductive semiconductor layer; a second conductive semiconductor layer under the active layer; a current blocking region under the second conductive semiconductor layer; a second electrode layer under the second conductive semiconductor layer and the current blocking region; and a first electrode layer including a protrusion protruding toward the first conductive semiconductor layer arranged, on the first conductive semiconductor layer.

1 . A light emitting device, comprising:
 a first conductive semiconductor layer;   an active layer under the first conductive semiconductor layer;   a second conductive semiconductor layer under the active layer;   a current blocking region under the second conductive semiconductor layer;   a second electrode layer under the second conductive semiconductor layer and the current blocking region; and   a first electrode layer including a protrusion protruding toward the first conductive semiconductor layer arranged, on the first conductive semiconductor layer.   
     
     
         2 . The light emitting device according to  claim 1 , wherein the first electrode layer includes a pad unit and an electrode unit connected to the pad unit. 
     
     
         3 . The light emitting device according to  claim 2 , wherein the electrode unit includes a body and the protrusion arranged under the body. 
     
     
         4 . The light emitting device according to  claim 3 , wherein the protrusion has a smaller width than that of the body. 
     
     
         5 . The light emitting device according to  claim 1 , wherein the protrusion is formed in a type of any one of quadrangle, triangular, and hemisphere cross-section. 
     
     
         6 . The light emitting device according to  claim 1 , wherein the first electrode layer is overlapped with the second electrode layer in a vertical direction. 
     
     
         7 . The light emitting device according to  claim 1 , wherein at least one part of the first electrode layer is overlapped with the current blocking region in a vertical direction. 
     
     
         8 . The light emitting device according to  claim 1 , wherein at least one part of the protrusion is overlapped with the current blocking region in a vertical direction. 
     
     
         9 . The light emitting device according to  claim 1 , further comprising a reflection electrode unit between the protrusion and the first conductive semiconductor layer. 
     
     
         10 . The light emitting device according to  claim 1 , wherein the first conductive semiconductor layer is a semiconductor layer having a formula of In x Al y Ga 1-x-yN  (0≦x≦1, 0≦y≦1, 0≦x+y≦1) and containing a n-type impurities and the second conductive semiconductor layer is a semiconductor layer having a formula of In x Al y Ga 1-x-y N (0≦x≦1, 0≦y≦1, 0≦x+y≦1) and containing a p-type impurities. 
     
     
         11 . The light emitting device according to  claim 1 , wherein the second electrode layer includes an ohmic contact layer contacted to the second conductive semiconductor layer, the reflection layer under the ohmic contact layer, and a conductive support substrate under the reflection layer. 
     
     
         12 . The light emitting device according to  claim 1 , wherein the current blocking region has an electrical insulation property or a schottky contact property. 
     
     
         13 . A light emitting device, comprising:
 a first conductive semiconductor layer;   an active layer under the first conductive semiconductor layer;   a second conductive semiconductor layer under the active layer;   a second electrode layer under the second conductive semiconductor layer; and   a first electrode layer having a pad unit, and an electrode unit connected to the pad unit on the first conductive semiconductor layer,   wherein the electrode unit includes a body, and a protrusion arranged under the body; and the protrusion is extended along the body.   
     
     
         14 . The light emitting device according to  claim 13 , wherein the protrusion is formed by being surrounded by the first conductive semiconductor layer. 
     
     
         15 . The light emitting device according to  claim 13 , wherein the protrusion has a smaller width than that of the body. 
     
     
         16 . The light emitting device according to  claim 13 , wherein the protrusion is formed in a type of any one of quadrangle, triangular, and hemisphere cross-section. 
     
     
         17 . The light emitting device according to  claim 13 , wherein the protrusion is continuously extended, and includes a straight line shape or curve line shape. 
     
     
         18 . The light emitting device according to  claim 13 , wherein a current blocking region is formed in the location overlapped with the first electrode layer in a vertical direction between the second conductive semiconductor layer and the second electrode layer. 
     
     
         19 . The light emitting device according to  claim 13 , further comprising a reflection electrode unit between the protrusion and the first conductive semiconductor layer. 
     
     
         20 . The light emitting device according to  claim 13 , wherein the second electrode layer includes an ohmic contact layer contacted to the second conductive semiconductor layer, a reflection layer under the ohmic contact layer, and a conductive support substrate under the reflection layer.