US2011024041A1PendingUtilityA1

Method of manufacturing semiconductor device, and etching apparatus

Assignee: NEC ELECTRONICS CORPPriority: May 12, 2008Filed: Oct 5, 2010Published: Feb 3, 2011
Est. expiryMay 12, 2028(~1.8 yrs left)· nominal 20-yr term from priority
Inventors:Masahiro Komuro
H10P 72/0421H10P 50/691Y10S438/944
46
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Claims

Abstract

An etching apparatus includes a process chamber into which an etching gas is introduced, an electrode for generating plasma disposed in the process chamber, a stage disposed in the process chamber, on which a substrate is placed, and a shadow ring disposed in the process chamber and placed above the stage, so as to cover the circumferential portion and an inner region adjacent thereto of the substrate in a non-contact manner. The shadow ring has an irregular pattern on the inner circumferential edge thereof.

Claims

exact text as granted — not AI-modified
1 . An etching apparatus comprising:
 a process chamber into which an etching gas is introduced;   an electrode for generating plasma disposed in said process chamber;   a stage disposed in said process chamber, on which a substrate is placed; and   a shadow ring disposed in said process chamber and placed above said stage, so as to cover the circumferential portion and an inner region adjacent thereto of said substrate in a non-contact manner,   wherein said shadow ring has an irregular pattern on the inner circumferential edge thereof.   
     
     
         2 . The etching apparatus according to  claim 1 ,
 wherein the inner circumferential surface of said shadow ring has a plurality of recesses at regular intervals.   
     
     
         3 . The etching apparatus according to  claim 2 ,
 wherein said recesses are rectangular-shaped.   
     
     
         4 . The etching apparatus according to  claim 2 ,
 wherein said recesses are square-shaped.   
     
     
         5 . The etching apparatus according to  claim 2 ,
 wherein said recesses are triangular-shaped.   
     
     
         6 . The etching apparatus according to  claim 2 ,
 wherein said recesses are rounded.   
     
     
         7 . The etching apparatus according to  claim 2 ,
 wherein a width of a recess of said recesses is smaller than a distance between adjacent ones of said recesses.   
     
     
         8 . The etching apparatus according to  claim 1 ,
 wherein said shadow ring comprises alumina.

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