Light emitting device and method for fabricating the same

Abstract

A light-emitting device comprises a second conductive type semiconductor layer, an active layer on the second conductive type semiconductor layer, a first conductive type semiconductor layer on the active layer, and a nonconductive semiconductor layer on the first conductive type semiconductor layer, the nonconductive semiconductor layer comprising a light extraction structure.

1 - 20 . (canceled) 
     
     
         21 . A nitride-based light emitting device comprising:
 a conductive support layer;   a bonding layer on the conductive support layer;   a second electrode on the bonding layer;   a first conductive semiconductor layer on the second electrode;   a light emitting layer on the first conductive semiconductor layer;   a second conductive semiconductor layer on the light emitting layer;   a nonconductive semiconductor layer on the second conductive semiconductor layer;   an electrode hole extending at least from the nonconductive semiconductor to a surface of the second conductive semiconductor layer; and   a first electrode on the second conductive semiconductor layer inwardly of the electrode hole.   
     
     
         22 . The nitride-based light emitting device as claimed in  claim 21 , wherein the electrode hole has a same shape as a shape of the first electrode. 
     
     
         23 . The nitride-based light emitting device as claimed in  claim 21 , wherein the first conductive semiconductor layer includes a p type semiconductor layer and the second conductive semiconductor layer includes an n type semiconductor layer. 
     
     
         24 . The nitride-based light emitting device as claimed in  claim 21 , wherein the nonconductive semiconductor layer includes an undoped GaN semiconductor layer. 
     
     
         25 . The nitride-based light emitting device as claimed in  claim 21 , wherein the nonconductive semiconductor layer includes a light extraction structure. 
     
     
         26 . The nitride-based light emitting device as claimed in  claim 21 , wherein the nonconductive semiconductor layer is formed thereon with a light extraction layer having a light extraction structure. 
     
     
         27 . The nitride-based light emitting device as claimed in  claim 26 , wherein the light extraction layer has a refractive index equal to or greater than a refractive index of the semiconductor layer. 
     
     
         28 . The nitride-based light emitting device as claimed in  claim 26 , wherein the light extraction layer includes TiO 2  or Si 3 N 4 . 
     
     
         29 . The nitride-based light emitting device as claimed in  claim 21 , further comprising a reflective electrode between the second electrode and the bonding layer. 
     
     
         30 . The nitride-based light emitting device as claimed in  claim 25 , wherein a diameter of a unit structure constituting the light extraction structure is 0.25 a to 0.45 a, in which a is defined as a period of the light extraction structure.