Film forming method, film forming apparatus, pattern forming method, and manufacturing method of semiconductor apparatus

Abstract

There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10 −5 qγ (mm) given with respect to a surface tension γ (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10 −5 (m·sec/N).

1 . A film forming method of discharging a solution from a discharge port of a nozzle onto the substrate, and then providing relative movement between the nozzle and the substrate while keeping the liquid discharging on the substrate, so as to form a liquid film on the substrate,
 wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be less than Aqγ (mm),   wherein q (m/sec) denotes a discharge speed of the solution continuously discharged through the discharge port,   γ (N/m) denotes a surface tension of the solution, and   A (m·sec/N) is 5×10 −5 .   
     
     
         2 - 87 . (canceled)