US2011006292A1PendingUtilityA1

Processes for forming electronic devices and electronic devices formed by such processes

Assignee: DU PONTPriority: Dec 30, 2004Filed: Sep 20, 2010Published: Jan 13, 2011
Est. expiryDec 30, 2024(expired)· nominal 20-yr term from priority
Inventors:Shiva Prakash
H10K 59/805H10K 50/805C23C 14/086C23C 14/46C23F 1/00C03C 25/68C03C 15/00H10K 85/10H10K 71/164H10K 85/111H10K 85/114H10K 85/1135H10K 71/60H10K 85/611
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Claims

Abstract

A process for forming an electronic device includes forming a first layer over a substrate, wherein the first layer includes an organic layer, and depositing a second layer over the substrate after forming the first layer, wherein depositing the second layer is performed using ion beam sputtering. In another embodiment, a process for forming an electronic device includes placing a workpiece within a depositing chamber of a depositing apparatus, wherein the workpiece includes a substrate and an organic layer overlying the workpiece. The process includes generating a plasma within a plasma-generating chamber of the depositing apparatus, wherein the plasma is not in direct contact with the workpiece. The process also includes sending an ion beam from the plasma-generating chamber towards a target within the depositing chamber, wherein the target includes a material, and depositing a layer of the material over the organic layer.

Claims

exact text as granted — not AI-modified
1 . An electronic device formed by a process comprising comprising:
 forming a first layer over a substrate, wherein the first layer includes an organic layer; and   depositing a second layer over the substrate after forming the first layer, wherein depositing the second layer is performed using ion beam sputtering;   wherein the active layer comprises an organic active layer.   
     
     
         2 . The device of  claim 1 , wherein the first layer further comprises a buffer layer, a charge-blocking layer, a charge-injection layer, a charge-transport layer, or a combination thereof. 
     
     
         3 . The device of  claim 1 , wherein the second layer includes a conductive layer. 
     
     
         4 . The device of  claim 3 , wherein:
 the electronic device includes an LED having an anode and a cathode; and   the second layer is at least part of the anode or the cathode.   
     
     
         5 . The device of  claim 1 , wherein the second layer includes an inorganic layer and an insulating layer. 
     
     
         6 . The device of  claim 5 , wherein depositing the second layer comprises depositing the second layer directly onto the organic layer. 
     
     
         7 . The device of  claim 1 , wherein the organic layer is at least part of an electronic component within the electronic device. 
     
     
         8 . An electronic device formed by a process comprising:
 placing a workpiece within a depositing chamber of a depositing apparatus, wherein the workpiece comprises a substrate and an organic layer overlying the workpiece;   generating a plasma within a plasma-generating chamber of the depositing apparatus, wherein the plasma is not in direct contact with the workpiece;   sending an ion beam from the plasma-generating chamber towards a target within the depositing chamber, wherein the target includes a material; and   depositing a layer of the material over the organic layer.   
     
     
         9 . The device of  claim 8 , wherein sending the ion beam comprises extracting ions from the plasma to form an ion beam. 
     
     
         10 . The device of  claim 8 , wherein sending the ion beam comprises accelerating ions within the ion beam. 
     
     
         11 . The device of  claim 8 , wherein placing the workpiece comprises placing the workpiece such that the workpiece does not lie along a line defined by a principal deflected angle. 
     
     
         12 . The device of  claim 9 , wherein the organic layer comprises an organic active layer. 
     
     
         13 . The device of  claim 12 , wherein the organic layer further comprises a buffer layer, a charge-blocking layer, a charge-injection layer, a charge-transport layer, or a combination thereof. 
     
     
         14 . The device of  claim 8 , wherein the layer of the material includes a conductive layer. 
     
     
         15 . The device of  claim 14 , wherein:
 the electronic device includes an LED having an anode and a cathode; and   the layer of the material is at least part of the anode or the cathode.   
     
     
         16 . The device of  claim 8 , wherein the layer of the material includes an insulating layer.

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