Single-sided storage media
Abstract
In one embodiment, a method can include providing first and second intermediate structures, each having first and second surfaces. Also, the method can include placing the first surface of the first intermediate structure adjacent to the first surface of the second intermediate structure, such that the first and second intermediate structures are in a stacked relationship. Additionally, the method can include simultaneously removing at least a portion of each of the second surfaces of the first and second intermediate structures while in the stacked relationship. Furthermore, the method can include forming a plating layer on each of the first and second surfaces of each of the first and second intermediate structures. Moreover, the method can include forming a magnetic layer on the second surface but not the first surface of each of the first and second intermediate structures.
Claims
exact text as granted — not AI-modified1 . A magnetic storage medium, comprising:
a substrate having first and second surfaces; first and second plating layers on the first and second surfaces, respectively; and a magnetic layer located adjacent to the second surface, wherein the second surface has a roughness of no more than about 70% of the roughness of the first surface.
2 . The magnetic storage medium of claim 1 , wherein the second surface has a roughness ranging from about 50% to about 70% of the roughness of the first surface.
3 . The magnetic storage medium of claim 1 , wherein the first roughness is at least about 2 Å and the second roughness is no more than about 200 Å.
4 . The magnetic storage medium of claim 1 , wherein the first roughness ranges from about 1 Å to about 2 Å and the second roughness ranges from about 150 Å to about 250 Å.
5 . The magnetic storage medium of claim 1 , wherein the first roughness is at least about 250 Å and the second roughness is no more than about 60 Å.
6 . The magnetic storage medium of claim 1 , wherein the first roughness is at least about 250 Å and the second roughness is no more than about 45 Å.
7 . The magnetic storage medium of claim 1 , wherein the first roughness is at least about 200 Å and the second roughness is no more than about 60 Å.
8 . The magnetic storage medium of claim 1 , wherein the first roughness is at least about 200 Å and the second roughness is no more than about 45 Å.
9 . The magnetic storage medium of claim 1 , wherein the first roughness ranges from about 150 Å to about 250 Å and the second roughness ranges from about 40 Å to about 60 Å.
10 . The magnetic storage medium of claim 1 , wherein the first roughness is at least about 100 Å and the second roughness is no more than about 60 Å.
11 . A method comprising:
(a) providing an intermediate structure, the intermediate structure comprising a substrate disk having first and second sides, wherein the second surface has a second roughness that is at least about 10% of a first roughness of the first surface; (b) forming a plating layer on each of the first and second surfaces; and (c) forming an information storage layer adjacent to the second side but not the first side to provide an information-storage media.
12 . The method of claim 11 , wherein (a) comprises:
(a1) simultaneously removing at least a portion of each of the second sides of the first and second intermediate structures while in the stacked relationship, wherein, in each of the first and second intermediate structures, the first side has first degree of roughness that is greater than a second degree of roughness of the second side.
13 . The method of claim 12 wherein, in (a1), the first and second intermediate structures are one of contact and gap merged in a holder.
14 . The method of claim 13 , wherein each of the outwardly facing second sides of each of the first and second intermediate structures are offset outwardly from an adjacent surface of the holder, whereby an abrasive surface contacts the corresponding second side without contacting the adjacent holder surface.
15 . The method of claim 12 , wherein (a) comprises:
(a2) surface machining the first and second sides of the first and second intermediate structures; and wherein, in the simultaneously removing, each of the second sides are contacted with an abrasive surface having a grit size of no more than about 5μ.
16 . The method of claim 15 , wherein the first degree of roughness is at least about 60 Å and the second degree of roughness is no more than about 40 Å.
17 . The method of claim 15 , wherein the second degree of roughness is no more than about 60% of the first degree of roughness.
18 . The method of claim 12 , wherein (a) comprises:
(a2) surface machining the first and second sides of the first and second intermediate structures; and wherein, in the simultaneously removing, each of the second sides are contacted with an abrasive surface having a grit size of at least about 5μ.
19 . The method of claim 18 , wherein the first degree of roughness is at least about 60 Å, and the second degree of roughness is no more than about 40 Å.
20 . The method of claim 18 , wherein the second degree of roughness is no more than about 60% of the first degree of roughness.Join the waitlist — get patent alerts
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