Method of manufacturing silicon carbide semiconductor device

Abstract

A carbon film deposition apparatus includes an evaporator for evaporating an oxygen-containing hydrocarbon. The carbon film deposition apparatus also includes a gas inlet pipe for introducing the oxygen-containing hydrocarbon gas evaporated in the evaporator. The carbon film deposition apparatus further includes a deposition furnace for depositing a carbon protection film over all surfaces of a wafer by pyrolyzing the oxygen-containing hydrocarbon gas introduced through the gas inlet pipe.

1 . A carbon film deposition apparatus comprising:
 an evaporator for evaporating an oxygen-containing hydrocarbon;   a gas inlet pipe for introducing the oxygen-containing hydrocarbon gas evaporated in the evaporator; and   a deposition furnace for depositing a carbon protection film over all surfaces of a wafer by pyrolyzing the oxygen-containing hydrocarbon gas introduced through the gas inlet pipe.   
     
     
         2 . The carbon film deposition apparatus set forth in  claim 1 , wherein a pipe including the gas inlet pipe provided from the evaporator to the deposition furnace is heated by a heater. 
     
     
         3 . The carbon film deposition apparatus set forth in  claim 1 , wherein the deposition furnace is provided with a substrate holder that holds the wafer by supporting its periphery at three points. 
     
     
         4 . The carbon film deposition apparatus set forth in  claim 1 , wherein the oxygen-containing hydrocarbon gas is any of methyl alcohol, ethyl alcohol, cetanol, hydroxyl acid, carboxylic acid, keton, aldehyde, phenol, ester, ether, and tetrahydrofuran. 
     
     
         5 . A carbon film deposition apparatus comprising:
 a gas inlet pipe for introducing a hydrocarbon gas;   a gas pyrolysis furnace for pyrolyzing the hydrocarbon gas introduced through the gas inlet pipe; and   a deposition furnace for depositing a carbon protection film over all surfaces of a wafer by introducing the hydrocarbon gas pyrolyzed in the pyrolysis furnace.   
     
     
         6 . The carbon film deposition apparatus set forth in  claim 5 , wherein the gas pyrolysis furnace is provided with a heater and a heat spreader for heating uniformly the inside of the gas pyrolysis furnace by receiving heat from the heater. 
     
     
         7 . The carbon film deposition apparatus set forth in  claim 6 , wherein the heat spreader is made of silica glass or ceramics. 
     
     
         8 . The carbon film deposition apparatus set forth in  claim 5 , wherein a temperature in the gas pyrolysis furnace is set higher than that in the deposition furnace.