Manufacturing method of semiconductor device

Abstract

A semiconductor manufacturing method includes forming a word line crossing with an active region on a semiconductor substrate; forming a diffusion layer region; forming a first insulating film as high as a bit line to be formed; etching the first insulating film, while using, as a mask, a pattern having a linear aperture extending to the active region on the first insulating film so as to form a groove pattern for exposing the surface of the semiconductor substrate; embedding a conductive film in the groove pattern; forming a mask pattern passing over a portion, in which a bit contact is formed, on the first insulating film; and removing the first insulating film and the conductive layer until the upper layer insulating film of the word line is exposed, while using the mask pattern as a mask so as to isolate a bit contact from another contact.

1 . A method of manufacturing a semiconductor device comprising:
 forming, on a semiconductor substrate comprising active regions which are element-isolated each other, a word line combining with a gate electrode so as to cross with the active regions;   forming diffusion regions on each active region between the word lines;   forming, on the whole surface, a first insulating film as high as a bit line to be formed;   forming a linear mask pattern having a linear aperture on the extending direction of the active regions on the first insulating film;   etching the first insulating film, while using the linear mask pattern as a mask, so as to form a groove pattern for exposing the surface of the semiconductor substrate comprising the active regions;   embedding a conductive film in the groove pattern;   forming an etching mask pattern passing over a portion, in which a bit contact is formed, on the first insulating film, in which the conductive layer is embedded; and   removing the first insulating film and the conductive layer until an upper layer insulating film of the word line is exposed, while using the linear mask pattern as a mask, so as to isolate a bit contact from another contact.   
     
     
         2 . The method of manufacturing a semiconductor device according to  claim 1 , further comprising a process of forming side walls on the word line. 
     
     
         3 . The method of manufacturing a semiconductor device according to  claim 1 , wherein the first insulating film and the conductive film are simultaneously removed under the condition that no etching selectivity ratio for both of them exists. 
     
     
         4 . The method of manufacturing a semiconductor device according to  claim 1 , wherein after the conductive film is removed, the first insulating film is removed. 
     
     
         5 . The method of manufacturing a semiconductor device according to  claim 1 , further comprising a process of forming a second insulating film after isolating a bit contact and another contact, performing planarization to expose the surface of the bit contact, and then forming a bit line connected to the bit contact.