Semiconductor Device and Method of Forming Inductor Over Insulating Material Filled Trench In Substrate

Abstract

A semiconductor device has a trench formed in a substrate. The trench has tapered sidewalls and depth of 10-120 micrometers. A first insulating layer is conformally applied over the substrate and into the trench. An insulating material, such as polymer, is deposited over the first insulating layer in the trench. A first conductive layer is formed over the insulating material. A second insulating layer is formed over the first insulating layer and first conductive layer. A second conductive layer is formed over the second insulating layer and electrically contacts the first conductive layer. The first and second conductive layers are isolated from the substrate by the insulating material in the trench. A third insulating layer is formed over the second insulating layer and second conductive layer. The first and second conductive layers are coiled over the substrate to exhibit inductive properties.

1 . A method of manufacturing a semiconductor device, comprising:
 providing a substrate;   forming a trench in the substrate;   conformally applying a first insulating layer over the substrate and into the trench;   depositing an insulating material over the first insulating layer in the trench;   forming a first conductive layer over the insulating material;   forming a second insulating layer over the first insulating layer and first conductive layer;   removing a portion of the second insulating layer to expose the first conductive layer;   forming a second conductive layer over the second insulating layer and electrically contacting the first conductive layer, the insulating material in the trench isolating the first and second conductive layers from the substrate; and   forming a third insulating layer over the second insulating layer and second conductive layer.   
     
     
         2 . The method of  claim 1 , wherein the first and second conductive layers are coiled over a surface of the substrate to exhibit inductive properties. 
     
     
         3 . The method of  claim 1 , wherein the depth of the trench is 10-120 micrometers. 
     
     
         4 . The method of  claim 1 , wherein the insulating material includes a polymer material. 
     
     
         5 . The method of  claim 1 , wherein the trench has tapered sidewalls. 
     
     
         6 . A method of manufacturing a semiconductor device, comprising:
 providing a substrate;   forming a trench in the substrate;   forming a first insulating layer into the trench;   depositing an insulating material over the first insulating layer;   forming a first conductive layer over the insulating material;   forming a second insulating layer over the first insulating layer and first conductive layer;   forming a second conductive layer over the second insulating layer and electrically contacting the first conductive layer; and   forming a third insulating layer over the second insulating layer and second conductive layer.   
     
     
         7 . The method of  claim 6 , further including conformally applying the first insulating layer over the substrate and into the trench. 
     
     
         8 . The method of  claim 6 , wherein the insulating material in the trench isolates the first and second conductive layers from the substrate. 
     
     
         9 . The method of  claim 6 , wherein the trench has a depth of 10-120 micrometers. 
     
     
         10 . The method of  claim 6 , wherein the first and second conductive layers are coiled over a surface of the substrate to exhibit inductive properties. 
     
     
         11 . The method of  claim 6 , wherein the insulating material includes a polymer material. 
     
     
         12 . The method of  claim 6 , wherein the trench has tapered sidewalls. 
     
     
         13 . The method of  claim 6 , wherein the substrate is made with low resistivity material of about 10-30 ohm-centimeter. 
     
     
         14 . A method of manufacturing a semiconductor device, comprising:
 providing a substrate;   forming a trench in the substrate;   depositing an insulating material in the trench;   forming a first conductive layer over the insulating material; and   forming a first insulating layer over the substrate, insulating material, and first conductive layer.   
     
     
         15 . The method of  claim 14 , further including:
 forming a second conductive layer over the first insulating layer and electrically contacting the first conductive layer; and   forming a second insulating layer over the first insulating layer and second conductive layer.   
     
     
         16 . The method of  claim 15 , wherein the insulating material in the trench isolates the first and second conductive layers from the substrate. 
     
     
         17 . The method of  claim 15 , wherein the first and second conductive layers are coiled over a surface of the substrate to exhibit inductive properties. 
     
     
         18 . The method of  claim 14 , further including conformally applying a second insulating layer over the substrate and into the trench. 
     
     
         19 . The method of  claim 14 , wherein the insulating material includes a polymer material. 
     
     
         20 . The method of  claim 14 , wherein the trench has a depth of 10-120 micrometers. 
     
     
         21 . A semiconductor device, comprising:
 a substrate having a trench formed in a surface of the substrate;   an insulating material deposited in the trench;   a first conductive layer formed over the insulating material;   a first insulating layer formed over the substrate and first conductive layer;   a second conductive layer formed over the first insulating layer and electrically contacting the first conductive layer, the first and second conductive layers being isolated from the substrate by the insulating material in the trench; and   a second insulating layer formed over the first insulating layer and second conductive layer.   
     
     
         22 . The semiconductor device of  claim 21 , wherein the first and second conductive layers are coiled over a surface of the substrate to exhibit inductive properties. 
     
     
         23 . The semiconductor device of  claim 21 , wherein the trench has a depth of 10-120 micrometers. 
     
     
         24 . The semiconductor device of  claim 21 , wherein the insulating material includes a polymer material. 
     
     
         25 . The semiconductor device of  claim 21 , wherein the trench has tapered sidewalls.