Thin-film led with p and n contacts electricall isolated from the substrate

Abstract

A thin-film LED includes an insulating substrate, an electrode on the insulating substrate, and an epitaxial structure on the electrode.

1 - 32 . (canceled) 
     
     
         33 . A method of manufacturing a thin-film light emitting diode, comprising:
 forming an epitaxial structure on a growth substrate, the epitaxial structure comprising a first epitaxial layer, a second epitaxial layer, and an active region between the first epitaxial layer and the second epitaxial layer;   forming an electrode layer on the second epitaxial layer of the epitaxial structure;   attaching a host substrate with a conductive adhesive layer to the electrode layer;   removing the growth substrate; and   removing part of the epitaxial structure to form a mesa with the epitaxial structure and to expose at least one of the second epitaxial layer or the electrode layer.   
     
     
         34 . The method of  claim 33 , wherein the host substrate is an insulating substrate. 
     
     
         35 . The method of  claim 33 , wherein the host substrate is a conductive substrate and an insulating dielectric film layer is between the host substrate and the conductive adhesive layer. 
     
     
         36 . The method of  claim 33 , further comprising roughening a surface of the first epitaxial layer to form micro-structures on the surface, the micro-structures being between about 100 nm and 500 nm in size. 
     
     
         37 . The method of  claim 36 , further comprising:
 forming a patterned second electrode on the surface of the first epitaxial layer; and   forming a metal contact on said at least one of the second epitaxial layer or the electrode layer.   
     
     
         38 . The method of  claim 37 , wherein the epitaxial structure is etched to expose the electrode layer and the metal contact is formed on the electrode layer. 
     
     
         39 . The method of  claim 33 , further comprising forming a metal layer on a bottom surface of the host substrate. 
     
     
         40 . The method of  claim 33 , further comprising:
 forming an insulating dielectric film layer on a bottom surface of the host substrate; and   forming a metal layer on the insulating dielectric film layer.