Semiconductor light-emitting device

Abstract

A light-emitting diode has: a substrate; a light-emitting layer having a first conductivity type cladding layer, an active layer, and a second conductivity type cladding layer stacked sequentially on a front side of the substrate; a first current-blocking portion partially formed in the middle on the light-emitting layer; a current-conducting portion formed on the second conductivity type cladding layer and the first current-blocking portion; a lower electrode formed on the back side of the substrate, a light-reflecting layer formed between the substrate and the light-emitting layer; a partial electrode formed on the surface of the light-reflecting layer and in a portion positioned below the first current-blocking portion; and a second current-blocking portion formed over the surface of the light-reflecting layer excluding the portion in which is formed the partial electrode.

1 . A light-emitting diode, comprising:
 a substrate including a light-extracting portion on a front side of the substrate;   a light-emitting part formed on a back side of the substrate, the light-emitting part comprising at least a first conductivity type cladding layer, an active layer, and a second conductivity type cladding layer stacked sequentially;   a current-blocking portion formed in a side portion on a back side of the second conductivity type cladding layer;   a current-spreading layer formed on a back side of the current-blocking portion and the second conductivity type cladding layer;   a current-injecting electrode formed on the back side of the current-spreading layer so as to face the current-blocking portion; and   a light-reflecting layer formed on the back side of the current-spreading layer excluding a portion of the current-spreading layer in which the current-injecting electrode is formed.   
     
     
         2 . The light-emitting diode according to  claim 1 , wherein a sheet resistance of the second conductivity type cladding layer is higher than a sheet resistance of the first conductivity type cladding layer. 
     
     
         3 . The light-emitting diode according to  claim 1 , wherein the light-reflecting layer comprises a layer including an alloy comprising of a member selected from a group consisting of Ag, Au, Al, and combinations thereof, or a composite layer of at least one of Ag, Au, or Al. 
     
     
         4 . The light-emitting diode according to  claim 1 , wherein the active layer comprises a multi-quantum-well structure. 
     
     
         5 . The light-emitting diode according to  claim 1  wherein the current-spreading layer comprises a transparent conductive film. 
     
     
         6 . The light-emitting diode according to  claim 1 , further comprising an insulating layer formed between the light reflecting layer and the second electrical conductive cladding layer.