US2010307683A1PendingUtilityA1

Substrate treatment method and substrate treatment apparatus

Assignee: TOKYO ELECTRON LTDPriority: May 10, 2004Filed: Jul 29, 2010Published: Dec 9, 2010
Est. expiryMay 10, 2024(expired)· nominal 20-yr term from priority
H10P 76/204H10P 72/0474H10P 72/0458H10P 72/0448G03F 7/40
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Claims

Abstract

To improve the etch resistance of a resist pattern corresponding to an exposure light source with a short wavelength. After a resist film on a substrate is exposed to light and developed to form a resist pattern, a treatment step of supplying a fluorine-based liquid to the surface of the resist pattern is performed. Thereafter, an etching treatment of a base film using the resist pattern as a mask is performed. This increases the density of fluorine molecules on the surface of the resist pattern before the etching treatment to improve the etch resistance of the resist pattern.

Claims

exact text as granted — not AI-modified
1 . A substrate treatment apparatus, comprising:
 liquid supply means for supplying a fluorine-based liquid to a resist pattern and forming a protection film with a high fluorine density on a surface of the resist pattern between a developing treatment to form the resist pattern on the substrate and an etching treatment of a base film using the resist pattern as a mask.   
     
     
         2 . The substrate treatment apparatus as set forth in  claim 1 , further comprising:
 another liquid supply means for supplying another liquid containing an OH group to the resist pattern between the performance of the developing treatment and the performance of the etching treatment.   
     
     
         3 . The substrate treatment apparatus as set forth in  claim 1 , further comprising:
 energy supply means for supplying energy to the resist pattern to which the fluorine-based liquid has been supplied to accelerate the reaction of the fluorine-based liquid with the surface of the resist pattern.   
     
     
         4 . The substrate treatment apparatus as set forth in  claim 1 , further comprising:
 oxidation means for oxidizing the surface of the resist pattern before the supply of the fluorine-based liquid.   
     
     
         5 . The substrate treatment apparatus as set forth in  claim 4 ,
 wherein said oxidation means comprise:   means for housing the substrate;   oxygen-containing gas supply means for supplying an oxygen-containing gas into said container; and   ultraviolet irradiation means for applying an ultraviolet ray to the substrate in said container.

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