Light-emitting crystal structures

Abstract

A method of manufacturing an apparatus, comprising forming a light-emitting crystalline structure. Forming the light-emitting crystalline structure includes forming a first barrier region on a substrate, the first barrier region having one or more inclined surfaces relative to a planar surface of the substrate. Forming the light-emitting crystalline structure also includes forming a second barrier region over the first barrier region, to form a junction at the inclined surfaces, wherein the first barrier region comprises one of an n-type or p-type semiconductor crystal, and the second barrier region comprises the other of the n-type or p-type semiconductor crystal.

1 . A method of manufacturing an apparatus, comprising:
 forming a light-emitting crystalline structure including:
 forming a first barrier region on a substrate, the first barrier region having one or more inclined surfaces relative to a planar surface of the substrate; and 
 forming a second barrier region over the first barrier region, to form a junction at the inclined surfaces, wherein the first barrier region comprises one of an n-type or p-type semiconductor crystal, and the second barrier region comprises the other of the n-type or p-type semiconductor crystal. 
   
     
     
         2 . The method of  claim 1 , wherein the first barrier region comprises an M-polar surface located over a seed barrier layer comprising an AlN layer on the substrate, and an N-polar surface located on the substrate comprising sapphire, and the inclined surfaces are formed by wet etching the N-polar surface of the first barrier region. 
     
     
         3 . The method of  claim 1 , wherein forming the first barrier region comprises forming a plurality of interconnected pyramidal-shaped portions on a base portion, the pyramidal-shaped portions and the base portion comprising a same material of the first barrier region. 
     
     
         3 . The method of  claim 1 , wherein forming the first barrier region comprises forming a plurality of interconnected wedge-shaped portions on a base portion, the wedge-shaped portions and the base portion comprising a same material of the first barrier region. 
     
     
         4 . The method of  claim 1 , wherein forming the light-emitting crystalline structure further includes:
 depositing a quantum well layer on the plurality of interconnected portions of the first barrier region; and   depositing the second barrier region on the quantum well layer that covers the plurality of interconnected portions.   
     
     
         5 . The method of  claim 1 , further comprising forming contacts to the first and second barrier regions, including:
 depositing a first ohmic contact on a M-polar surface of the first barrier region; and   depositing a second ohmic contact on the second barrier region, wherein the second barrier region is located over an N-polar surface of the first barrier region.   
     
     
         6 . The method of  claim 1 , wherein one of the n-type or p-type barrier regions comprises one or more of the inclined surfaces that are interconnected through a base portion on the substrate, and the other of the n-type or p-type barrier regions comprises an outer layer that continuously coats the inclined surfaces. 
     
     
         7 . The method of  claim 1 , wherein the inclined surfaces comprise the facets of the structures, the structures having pyramidal shapes. 
     
     
         8 . The method of  claim 1 , wherein the inclined surfaces comprise the facets of the structures, the structures having wedge shapes.