Circular ring-shaped member for plasma process and plasma processing apparatus

Abstract

A plasma processing apparatus includes a processing chamber the inside of which is maintained in a vacuum; a mounting table configured to mount a target substrate and serve as a lower electrode in the processing chamber; a circular ring-shaped member provided at the mounting table so as to surround a peripheral portion of the target substrate; an upper electrode arranged to face the lower electrode thereabove; and a power feed unit for supplying a high frequency power to the mounting table. The apparatus performs a plasma process on the target substrate by plasma generated in the processing chamber. The circular ring-shaped member includes at least one ring-shaped groove configured to adjust an electric field distribution to a desired distribution in a plasma generation space, and the groove is formed in a surface of the circular ring-shaped member and the surface is on an opposite side to the plasma generation space.

1 . A circular ring-shaped member for a plasma process provided to surround a peripheral portion of a target substrate to be plasma-processed, the member comprising:
 at least one ring-shaped groove configured to adjust an electric field distribution to a desired distribution in a plasma generation space,   wherein the groove is formed in a surface of the circular ring-shaped member and the surface is on an opposite side to the plasma generation space.   
     
     
         2 . The circular ring-shaped member of  claim 1 , wherein the groove is formed in an inner peripheral portion of the circular ring-shaped member. 
     
     
         3 . The circular ring-shaped member of  claim 1 , wherein impedance of the circular ring-shaped member is adjusted to be a desired value depending on a shape of the groove. 
     
     
         4 . The circular ring-shaped member of  claim 1 , wherein the groove is formed to have a predetermined width, starting from a position between an inner end of the circular ring-shaped member and a position in a range of about 30% or less of a width of the circular ring-shaped member in a diametric direction. 
     
     
         5 . The circular ring-shaped member of  claim 1 , wherein the groove is formed to have a predetermined width which is about 80% or less of a width of the circular ring-shaped member, starting from an inner end of the circular ring-shaped member in a diametric direction. 
     
     
         6 . The circular ring-shaped member of  claim 1 , wherein a depth of the groove is about 70% or less of a thickness of the circular ring-shaped member. 
     
     
         7 . The circular ring-shaped member of  claim 1 , wherein the circular ring-shaped member is made of at least one of quartz, carbon, silicon, silicon carbide, and a ceramic material. 
     
     
         8 . A plasma processing apparatus comprising:
 a processing chamber the inside of which is maintained in a vacuum condition;   a mounting table configured to mount thereon a target substrate and serve as a lower electrode in the processing chamber;   a circular ring-shaped member provided at the mounting table so as to surround a peripheral portion of the target substrate;   an upper electrode arranged to face the lower electrode thereabove; and   a power feed unit for supplying a high frequency power to the mounting table,   wherein the plasma processing apparatus performs a plasma process on the target substrate by plasma generated in the processing chamber,   the circular ring-shaped member includes at least one ring-shaped groove configured to adjust an electric field distribution to a desired distribution in a plasma generation space, and   the groove is formed in a surface of the circular ring-shaped member and the surface is on an opposite side to the plasma generation space.   
     
     
         9 . The plasma processing apparatus of  claim 8 , wherein the groove is formed in an inner peripheral portion of the circular ring-shaped member. 
     
     
         10 . The plasma processing apparatus of  claim 8 , wherein impedance of the circular ring-shaped member is adjusted to be a desired value depending on a shape of the groove. 
     
     
         11 . The plasma processing apparatus of  claim 8 , wherein the groove is formed to have a predetermined width, starting from a position between an inner end of the circular ring-shaped member and a position in a range of about 30% or less of a width of the circular ring-shaped member in a diametric direction. 
     
     
         12 . The plasma processing apparatus of  claim 8 , wherein the groove is formed to have a predetermined width which is about 80% or less of a width of the circular ring-shaped member, starting from an inner end of the circular ring-shaped member in a diametric direction. 
     
     
         13 . The plasma processing apparatus of  claim 8 , wherein a depth of the groove is about 70% or less of a thickness of the circular ring-shaped member. 
     
     
         14 . The plasma processing apparatus of  claim 8 , wherein the circular ring-shaped member is made of at least one of quartz, carbon, silicon, silicon carbide, and a ceramic material.