Solution deposition assembly

Abstract

Methods and devices are provided for improved deposition systems. In one embodiment of the present invention, a deposition system is provided for use with a solution and a substrate. The system comprises of a solution deposition apparatus; at least one heating chamber; at least one assembly for holding a solution over the substrate; and a substrate curling apparatus for curling at least one edge of the substrate to define a zone capable of containing a volume of the solution over the substrate. In another embodiment of the present invention, a deposition system for use with a substrate, the system comprising a solution deposition apparatus; at heating chamber; and at least assembly for holding solution over the substrate to allow for a depth of at least about 0.5 microns to 10 mm.

1 . A deposition system for use with a solution and a substrate. 
     
     
         2 . The system of  claim 1  wherein the system comprises:
 a solution deposition apparatus;   at least one heating chamber;   at least one assembly for holding a solution over the substrate; and   a substrate curling apparatus for curling at least one edge of the substrate to define a zone capable of containing a volume of the solution over the substrate.   
     
     
         3 . The system of  claim 2  wherein the assembly curls at least two edges of the substrate. 
     
     
         4 . The system of  claim 2  wherein the assembly for holding solution over the substrate to allow for a depth of at least about 0.5 microns to about 10 mm. 
     
     
         5 . The system of  claim 2  wherein the assembly for holding solution over the substrate to allow for a depth of at least about 1 mm to about 5 mm. 
     
     
         6 . The system of  claim 2  wherein the curling apparatus curls opposing edges of the substrate. 
     
     
         7 . The system of  claim 6  wherein the curling apparatus is configured to transition a planar substrate to a substrate with curls along two edges, wherein the transition occurs over a distance sufficient prevent permanent deformation of the substrate when the substrate is uncurled. 
     
     
         8 . The system of  claim 6  wherein the curling apparatus is configured to transition a planar substrate to a substrate with curls along two edges over a distance of at least 4 inches. 
     
     
         9 . The system of  claim 6  wherein the curling apparatus is configured to transition a planar substrate to a substrate with curls along two edges over a distance of at least 6 inches. 
     
     
         10 . The system of  claim 6  wherein the curling apparatus creates curls of sufficient height to contain the volume of solution therein without allowing the solution to spill over an upper of the curl. 
     
     
         11 . The system of  claim 6  wherein the assembly for holding solution further comprises of an uncurling apparatus for uncurling at least two edges of the substrate to return the substrate to a substantially planar configuration. 
     
     
         12 . The system of  claim 6  wherein the curling apparatus comprise of a web guide. 
     
     
         13 . The system of  claim 6  wherein the curling apparatus comprise of a shaped web guide. 
     
     
         14 . The system of  claim 2  wherein the solution deposition apparatus comprises of a spray deposition system to deposit the solution over the substrate. 
     
     
         15 . The system of  claim 2  wherein the solution deposition apparatus comprises of an ultrasonic spray deposition system to deposit the solution over the substrate. 
     
     
         16 . The system of  claim 2  wherein the substrate comprises of a flexible material. 
     
     
         17 . The system of  claim 2  wherein the substrate comprises of a metal foil. 
     
     
         18 . The system of  claim 2  wherein the solution comprises a precursor for forming a junction partner for a group IB-IIIA-VIA absorber layer. 
     
     
         19 . The system of  claim 2  wherein the solution comprises a precursor for forming a Group IIB-VIA junction partner. 
     
     
         20 . The system of  claim 2  wherein the solution comprises a precursor for forming a junction partner selected from the group consisting of: cadmium sulfide (CdS), zinc sulfide (ZnS), zinc hydroxide, zinc selenide (ZnSe). 
     
     
         21 . The system of  claim 2  wherein the solution comprises of a Group IIB ionic species is obtained from an aqueous solution of one or more of the following: sulfate, acetate, bromide, fluoride, chloride, iodide, hydroxide, nitrate, oxalate, citrate, phosphate, tungstate, or hydrates of the Group IIB species. 
     
     
         22 . The system of  claim 2  wherein the solution comprises of a Group VIA ionic species is obtained from an aqueous solution of one or more of the following: oxides, halides, sulfates, nitrates, or ureates of the Group VIA species. 
     
     
         23 . The system of  claim 2  wherein the solution has a pH of from about 9 to about 14. 
     
     
         24 . The system of  claim 2  wherein the solution has a pH of from about 11 to about 12. 
     
     
         25 . The system of  claim 2  wherein the assembly for holding solution is at least partially contained in the heating chamber.