Semiconductor device manufacturing method, substrate processing apparatus, substrate manufacturing method

Abstract

Provided is a substrate processing apparatus, a semiconductor device manufacturing method, and a substrate manufacturing method. The substrate processing apparatus comprises: a reaction chamber configured to process substrates; a first gas supply system configured to supply at least a silicon-containing gas and a chlorine-containing gas or at least a gas containing silicon and chlorine; a first gas supply unit connected to the first gas supply system; a second gas supply system configured to supply at least a reducing gas; a second gas supply unit connected to the second gas supply system; a third gas supply system configured to supply at least a carbon-containing gas and connected to at least one of the first gas supply unit and the second gas supply unit; and a control unit configured to control the first to third gas supply systems.

1 . A substrate processing apparatus comprising:
 a reaction chamber configured to process a plurality of substrates stacked at predetermined intervals;   a first gas supply system configured to supply at least a silicon-containing gas and a chlorine-containing gas or supply at least a gas containing silicon and chlorine;   a first gas supply unit connected to the first gas supply system and comprising a first gas supply outlet for supplying a gas in a direction parallel with main surfaces of the substrates disposed in the reaction chamber;   a second gas supply system configured to supply at least a reducing gas;   a second gas supply unit connected to the second gas supply system and comprising at least a second gas supply outlet;   a third gas supply system configured to supply at least a carbon-containing gas and connected to at least one of the first gas supply unit and the second gas supply unit; and   a control unit configured to control the first gas supply system so that at least the silicon-containing gas and the chlorine-containing gas or at least the gas containing silicon and chlorine is supplied into the reaction chamber from the first gas supply outlet of the first gas supply unit, the second gas supply system so that at least the reducing gas is supplied into the reaction chamber from the second gas supply outlet of the second gas supply unit, and the third gas supply system so that at least the carbon-containing gas is supplied into the reaction chamber from the first gas supply outlet of the first gas supply unit or the second gas supply outlet of the second gas supply unit, so as to form silicon carbide films on the substrates.   
     
     
         2 . A semiconductor device manufacturing method comprising:
 loading a plurality of substrates stacked at predetermined intervals into a reaction chamber;   forming silicon carbide films on the substrates by supplying at least a silicon-containing gas and a chlorine-containing gas or at least a gas containing silicon and chlorine into the reaction chamber from a first gas supply outlet of a first gas supply unit which is configured to supply a gas in a direction parallel with main surfaces of the substrates disposed in the reaction chamber, supplying at least a reducing gas into the reaction chamber from a second gas supply outlet of a second gas supply unit, and supplying at least a carbon-containing gas into the reaction chamber from the first gas supply outlet of the first gas supply unit or the second gas supply outlet of the second gas supply unit; and   unloading the substrates from the reaction chamber.   
     
     
         3 . A substrate manufacturing method comprising:
 loading a plurality of substrates stacked at predetermined intervals into a reaction chamber;   forming silicon carbide films on the substrates by supplying at least a silicon-containing gas and a chlorine-containing gas or at least a gas containing silicon and chlorine into the reaction chamber from a first gas supply outlet of a first gas supply unit which is configured to supply a gas in a direction parallel with main surfaces of the substrates disposed in the reaction chamber, supplying at least a reducing gas into the reaction chamber from a second gas supply outlet of a second gas supply unit, and supplying at least a carbon-containing gas into the reaction chamber from the first gas supply outlet of the first gas supply unit or the second gas supply outlet of the second gas supply unit; and   unloading the substrates from the reaction chamber.   
     
     
         4 . The substrate processing apparatus of  claim 1 , wherein the first gas supply system is configured to further supply a rare gas, and
 the control unit is configured to control the first gas supply system, so that at least the silicon-containing gas, the chlorine-containing gas, and the rare gas are supplied into the reaction chamber from the first gas supply outlet of the first gas supply unit, or at least the gas containing silicon and chlorine and the rare gas are supplied into the reaction chamber from the first gas supply outlet of the first gas supply unit.   
     
     
         5 . The substrate processing apparatus of  claim 1 , wherein the first gas supply system is configured to further supply argon gas, and
 the control unit is configured to control the first gas supply system, so that at least the silicon-containing gas, the chlorine-containing gas, and the argon gas are supplied into the reaction chamber from the first gas supply outlet of the first gas supply unit, or at least the gas containing silicon and chlorine and the argon gas are supplied into the reaction chamber from the first gas supply outlet of the first gas supply unit.   
     
     
         6 . The substrate processing apparatus of  claim 1 , wherein the second gas supply unit is configured so that a gas is supplied through the second gas supply outlet in a direction parallel with the main surfaces of the substrates disposed in the reaction chamber. 
     
     
         7 . The substrate processing apparatus of  claim 6 , wherein the first gas supply unit comprises a first gas supply nozzle installed in the reaction chamber and comprising an inner gas flow passage, and the second gas supply unit comprises a second gas supply nozzle installed in the reaction chamber and comprising an inner gas flow passage. 
     
     
         8 . The substrate processing apparatus of  claim 1 , wherein the second gas supply system is configured to supply hydrogen gas as the reducing gas, and the control unit is configured to control the second gas supply system so that at least the hydrogen gas is supplied into the reaction chamber from the second gas supply outlet of the second gas supply unit. 
     
     
         9 . The substrate processing apparatus of  claim 1 , wherein the silicon-containing gas is silane gas, disilane gas, or trisilane gas,
 the chlorine-containing gas is hydrogen chloride gas or chlorine gas,   the carbon-containing gas is propane gas, ethylene gas, or propylene gas, and   the gas containing silicon and chlorine is tetrachlorosilane gas, trichlorosilane gas, or dichlorosilane gas.   
     
     
         10 . The substrate processing apparatus of  claim 1 , wherein an inside of the reaction chamber is kept at a temperature of 1500° C. to 1700° C. and a pressure of 10 Torr to 200 Torr during forming the silicon carbide films on the substrates.