US2010297808A1PendingUtilityA1

Molecular electronic device including organic dielectric thin film and method of fabricating the same

Assignee: KOREA ELECTRONICS TELECOMMPriority: Sep 5, 2006Filed: Jun 14, 2010Published: Nov 25, 2010
Est. expirySep 5, 2026(~0.1 yrs left)· nominal 20-yr term from priority
H10K 19/202G11C 11/14B82Y 10/00H10K 10/701H10K 85/6574
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Claims

Abstract

Provided are a molecular electronic device and a method of fabricating the molecular electronic device. The molecular electronic device includes a substrate, an organic dielectric thin film formed over the substrate, a molecular active layer formed on the organic dielectric thin film and having a charge trap site, and an electrode formed on the molecular active layer. The organic dielectric thin film may be immobilized on the electrode or a Si layer by a self-assembled method. The organic dielectric thin film may include first and second molecular layers bound together through hydrogen bonds. An organic compound may be self-assembled over the substrate to form the organic dielectric thin film. The organic compound may include an M′-R-T structure, where M′, R and T represent a thiol or silane derivative, a saturated or unsaturated C 1 to C 20 hydrocarbon group which is substituted or unsubstituted with fluorine (F), and an amino(—NH 2 ) or carboxyl (—COOH) group, respectively.

Claims

exact text as granted — not AI-modified
1 . A method of fabricating a molecular electronic device, the method comprising:
 forming an organic dielectric thin film over a substrate;   forming a molecular active layer on the organic dielectric thin film, the molecular active layer comprising an organic material with a charge trap site; and   forming an electrode on the molecular active layer.   
     
     
         2 . The method of  claim 1 , wherein the forming of the organic dielectric thin film comprises self-assembling an organic compound on the surface of the substrate. 
     
     
         3 . The method of  claim 2 , wherein the forming of the organic dielectric thin film comprises dipping the substrate into a solvent in which an organic compound is dissolved, the organic compound comprising a structure represented by Formula 8 as follows:
 Formula 8   M′-R-T   where M′ is a thiol derivative or a silane derivative; R is a saturated or unsaturated C 1  to C 20  hydrocarbon group which is substituted or unsubstituted with fluorine (F); and T is an amino(—NH 2 ) group or a carboxyl (—COOH) group.   
     
     
         4 . The method of  claim 2 , further comprising, prior to forming the organic dielectric thin film, forming a metal electrode on the substrate, wherein the forming of the organic dielectric thin film comprises dipping the substrate on which the metal electrode is formed into a solvent in which an organic compound is dissolved, the organic compound comprising a structure represented by Formula 8 as follows:
 Formula 8   M′-R-T   where M′ is a thiol derivative; R is a saturated or unsaturated C 1  to C 20  hydrocarbon group which is substituted or unsubstituted with fluorine (F); and T is an amino(—NH 2 ) group or a carboxyl (—COOH) group.   
     
     
         5 . The method of  claim 3 , wherein the forming of the organic dielectric thin film is performed in an anhydrous and anoxic ambient. 
     
     
         6 . The method of  claim 4 , wherein the forming of the organic dielectric thin film comprises:
 forming a first molecular layer by self-assembling a first organic compound on the metal electrode, the first organic compound comprising a structure represented by Formula 8; and   forming a second molecular layer by binding a second organic compound to the first organic compound, the second organic compound comprising a structure represented by Formula 8.   
     
     
         7 . The method of  claim 6 , wherein the first molecular layer and the second molecular layer bind together through hydrogen bonds between —NH 2  groups or between —COOH groups. 
     
     
         8 . The method of  claim 6 , wherein the forming of the first molecular layer is performed in situ with the forming of the second molecular layer. 
     
     
         9 . The method of  claim 1 , wherein, after forming the organic dielectric thin film, a thiol derivative group is exposed on the upper surface of the organic dielectric thin film; and the forming of the molecular active layer comprises chemically binding an organic compound with the thiol derivative group existing on the upper surface of the organic dielectric thin film, the organic compound comprising π electrons and one functional group selected from a group consisting of a —COOH group, a —COONa group, and succin imidyl ester group.

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