Method of Fabricating Photoelectronic Device of Group III Nitride Semiconductor and Structure Thereof

Abstract

A method of fabricating a photoelectric device of Group III nitride semiconductor comprises the steps of: forming a first Group III nitride semiconductor layer on a surface of an original substrate; forming a patterned epitaxial-blocking layer on the first Group III nitride semiconductor layer; forming a second Group III nitride semiconductor layer on the epitaxial-blocking layer and the first Group III nitride semiconductor layer not covered by the epitaxial-blocking layer and then removing the epitaxial-blocking layer; forming a third Group III nitride semiconductor layer on the second Group III nitride semiconductor layer; depositing or adhering a conductive layer on the third Group III nitride semiconductor layer; and releasing a combination of the third Group III nitride semiconductor layer and the conductive layer apart from the second Group III nitride semiconductor layer.

1 . A photoelectric device of Group III nitride semiconductor, comprising:
 a patterned Group III nitride semiconductor layer;   a metallic mirror layer formed on said Group III nitride semiconductor layer; and   a conductive layer on said metallic mirror layer.   
     
     
         2 . The photoelectric device of Group III nitride semiconductor of  claim 1 , wherein the material of the Group III nitride semiconductor layer is Al x In y Ga 1-x-y N, wherein 0≦x≦1 and 0≦y≦1. 
     
     
         3 . The photoelectric device of Group III nitride semiconductor of  claim 1 , wherein the conductive layer is formed by electroplating, composite electroplating, or bonding depositing copper (Cu), nickel (Ni), copper tungsten alloy (CuW), silicon (Si), or silicon carbide (SiC). 
     
     
         4 . The photoelectric device of Group III nitride semiconductor of  claim 1 , further comprising an N-type semiconductor layer, an active layer, and a P-type semiconductor layer formed between the Group III nitride semiconductor layer and the metallic mirror layer. 
     
     
         5 . The photoelectric device of Group III nitride semiconductor of  claim 1 , wherein the Group III nitride semiconductor layer comprises an N-type semiconductor layer, an active layer, and a P-type semiconductor layer.