Method for manufacturing nitride based single crystal substrate and method for manufacturing nitride based semiconductor device

Abstract

A method for manufacturing a nitride based single crystal substrate and a method for manufacturing a nitride based semiconductor device. The method for manufacturing the nitride based single crystal substrate includes forming a nitride based single crystal layer on a preliminary substrate; forming a polymer support layer by applying a setting adhesive material having flowability on the upper surface of the nitride based single crystal layer and hardening the applied adhesive material; and separating the nitride based single crystal layer from the preliminary substrate by irradiating a laser beam onto the lower surface of the preliminary substrate. The method for manufacturing the nitride based single crystal substrate is applied to the manufacture of a nitride based semiconductor device having a vertical structure.

1 - 8 . (canceled) 
     
     
         9 . A method for manufacturing a nitride based light emitting device comprising:
 forming a nitride based light emitting structure by sequentially stacking a first conduction-type nitride based semiconductor layer, an active layer, and a second conduction-type nitride based semiconductor layer on a preliminary substrate;   forming a polymer support layer by applying a setting adhesive material having flowability on the upper surface of the nitride based light emitting structure and hardening the applied adhesive material;   separating the nitride based light emitting structure from the preliminary substrate by irradiating a laser beam onto the lower surface of the preliminary substrate;   bonding the light emitting structure to a conductive permanent substrate in such a manner that the separated surface of the light emitting structure serves as a bonding surface;   removing the polymer support layer from the light emitting structure; and   forming first and second electrodes on the upper surface of the light emitting structure and the lower surface of the permanent substrate, respectively.   
     
     
         10 . The method according to  claim 9 , further comprising cutting the light emitting structure into portions having a size corresponding to that of desired light emitting diodes, after the forming of the first and second electrodes. 
     
     
         11 . The method according to  claim 9 , further comprising:
 partially cutting the light emitting structure into portions having a size corresponding to that of the desired light emitting diodes, between the forming of the light emitting structure and the forming of the polymer support layer; and   completely cutting the light emitting structure into portions having the size corresponding to that of desired light emitting diodes, after the forming of the first and second electrodes.   
     
     
         12 . The method according to  claim 9 , further comprising partially cutting the light emitting structure into portions having a size corresponding to that of desired light emitting diodes, between the forming of the light emitting structure and the forming of the polymer support layer,
 wherein the light emitting structure is divided into individual light emitting diodes by removing a portion of the light emitting structure, which is not cut in the partially cutting of the light emitting structure, in the separating of the light emitting structure from the preliminary substrate.   
     
     
         13 . The method according to  claim 12 , wherein a portion of the light emitting structure, which is not cut in the partially cutting of the light emitting structure, has a thickness of 5˜500 nm. 
     
     
         14 . The method according to  claim 11 , wherein the forming of the polymer support layer includes applying the setting adhesive material so that grooves, which are formed in the light emitting structure in the partially cutting of the light emitting structure, are filled with the setting adhesive material. 
     
     
         15 . The method according to  claim 11 , wherein grooves, which are formed in the light emitting structure in the partially cutting of the light emitting structure, have a width of 10˜500 μm. 
     
     
         16 . The method according to  claim 9 , wherein the preliminary substrate is made of a material having an energy band gap larger than that of the first conduction-type nitride based semiconductor layer. 
     
     
         17 . The method according to  claim 16 , wherein the preliminary substrate is made of one material selected from the group consisting of sapphire, SiC, Si, MgAl 2 O 4 , MgO, LiAlO 2 , and LiGaO 2 . 
     
     
         18 . The method according to  claim 9 , wherein the setting adhesive material includes at least one selected from the group consisting of a thermosetting resin, an ultraviolet-setting resin, and a naturally setting resin, which have a high adhesive strength with the nitride based light emitting structure. 
     
     
         19 . The method according to  claim 18 , wherein the setting adhesive material is epoxy resin. 
     
     
         20 . The method according to  claim 9 , wherein the applying of the setting adhesive material is performed by spin coating or hand printing. 
     
     
         21 . The method according to  claim 9 , wherein the polymer support layer has a thickness of 0.01˜5 mm. 
     
     
         22 . The method according to  claim 9 , wherein the first conduction-type and second conduction-type nitride based semiconductor layers are p-type and n-type nitride based semiconductor layers, respectively. 
     
     
         23 . A method for manufacturing a nitride based light emitting device comprising:
 forming a nitride based light emitting structure by sequentially stacking a first conduction-type nitride based semiconductor layer, an active layer, and a second conduction-type nitride based semiconductor layer on a preliminary substrate;   cutting the nitride based light emitting structure into portions having a size corresponding to that of desired light emitting diodes;   forming electrodes on the second conduction-type nitride based semiconductor layer;   forming a polymer support layer by applying a setting adhesive material having flowability on the upper surface of the nitride based light emitting structure and hardening the applied adhesive material;   separating the nitride based light emitting structure from the preliminary substrate by irradiating a laser beam onto the lower surface of the preliminary substrate; and   removing the polymer support layer from the light emitting structure.   
     
     
         24 . The method according to  claim 23 , wherein:
 in the cutting of the light emitting structure, the light emitting structure is partially cut into portions having the size corresponding to that of the desired light emitting diodes; and   the light emitting structure is divided into individual light emitting diodes by removing a portion of the light emitting structure, which is not cut in the partially cutting of the light emitting structure, in the separating of the light emitting structure from the preliminary substrate.   
     
     
         25 . The method according to  claim 23 , wherein a portion of the light emitting structure, which is not cut in the partially cutting of the light emitting structure, have a thickness of 5˜500 nm. 
     
     
         26 . The method according to  claim 24 , wherein the forming of the polymer support layer includes applying the setting adhesive material so that grooves, which are formed in the light emitting structure in the partially cutting of the light emitting structure, are filled with the setting adhesive material. 
     
     
         27 . The method according to  claim 24 , wherein grooves, which are formed in the light emitting structure in the partially cutting of the light emitting structure, has a width of 10˜500 μm. 
     
     
         28 . The method according to  claim 23 , wherein the preliminary substrate is made of a material having an energy band gap larger than that of the first conduction-type nitride based semiconductor layer. 
     
     
         29 . The method according to  claim 28 , wherein the preliminary substrate is made of one material selected from the group consisting of sapphire, SiC, Si, MgAl 2 O 4 , MgO, LiAlO 2 , and LiGaO 2 . 
     
     
         30 . The method according to  claim 23 , wherein the setting adhesive material includes at least one selected from the group consisting of a thermosetting resin, an ultraviolet-setting resin, and a naturally setting resin, which have a high adhesive strength with the nitride based light emitting structure. 
     
     
         31 . The method according to  claim 30 , wherein the setting adhesive material is epoxy resin. 
     
     
         32 . The method according to  claim 23 , wherein the applying of the setting adhesive material is performed by spin coating or hand printing. 
     
     
         33 . The method according to  claim 23 , wherein the polymer support layer has a thickness of 0.01˜5 mm.