Nanostructures including a metal

Abstract

One embodiment includes non-catalyticly forming a nanowire on a substrate from an organometallic vapor without application of any type of reduction agent. The nanowire is grown during this formation in a direction away from the substrate and is freestanding during growth. The nanowire has a first dimension of 500 nanometers or less and a second dimension extending from the substrate to a free end of the nanowire at least 10 times greater than the first dimension. In one form, the organometallic vapor includes copper and the nanowire essentially consists of elemental copper, a copper alloy, or oxide of copper. Alternatively or additionally, the nanowire is of a monocrystalline structure.

1 - 27 . (canceled) 
     
     
         28 . An apparatus, comprising:
 a substrate;   a plurality of freestanding nanowires attached to the substrate, the nanowires each being monocrystalline and including copper; and   wherein the nanowires each include a respective free end, each have a first dimension of 500 nanometers or less, and each have a second dimension extending from the substrate to the respective free end, the second dimension being at least 10 times greater than the first dimension.   
     
     
         29 . The apparatus of  claim 28 , wherein the nanowires contact a substrate surface comprised of at least one of a semiconductor, a dielectric, and a metal. 
     
     
         30 . The apparatus of  claim 28 , wherein the substrate is comprised of silicon dioxide. 
     
     
         31 . The apparatus of  claim 28 , wherein the nanowires consist essentially of copper. 
     
     
         32 . (canceled) 
     
     
         33 . The apparatus of  claim 28 , wherein the first dimension is less than 10 nanometers. 
     
     
         34 . The apparatus of  claim 28 , wherein the second dimension is at least 50 times the first dimension. 
     
     
         35 . The apparatus of  claim 28 , wherein the substrate includes a semiconductor surface and the nanowires contact the semiconductor surface. 
     
     
         36 . The apparatus of  claim 28 , wherein the substrate includes a metallic surface and the nanowires contact the metallic surface. 
     
     
         37 . An apparatus, comprising:
 a substrate with a dielectric surface;   a plurality of freestanding nanowires in contact with the dielectric surface of the substrate, the nanowires each including copper; and   wherein the nanowires each include a respective free end, each have a first dimension of 500 nanometers or Less, and each have a second dimension extending from the substrate to the respective free end, the second dimension being at least 10 times greater than the first dimension.   
     
     
         38 . The apparatus of  claim 37 , wherein the substrate is comprised of silicon dioxide. 
     
     
         39 . The apparatus of  claim 37 , wherein the nanowires consist essentially of copper. 
     
     
         40 . The apparatus of  claim 37 , wherein the first dimension is 50 nanometers or less. 
     
     
         41 . The apparatus of  claim 28 , wherein the nanowires are included in a display device. 
     
     
         42 . The apparatus of  claim 37 , wherein the nanowires are included in a display device. 
     
     
         43 . The apparatus of  claim 37 , wherein the nanowires are monocrystalline.