Semiconductor device

Abstract

The present invention provides a method for forming a semiconductor device, which comprises the steps of preparing a semiconductor wafer including an electrode pad, an insulating film formed with a through hole and a bedding metal layer which are formed in a semiconductor substrate, forming a first resist mask which exposes each area for forming a redistribution wiring, over the bedding metal layer, forming a redistribution wiring connected to the electrode pad and extending in an electrode forming area for a post electrode with the first resist mask as a mask, removing the first resist mask by a dissolving solution to expose each area excluding the electrode forming area for the redistribution wiring and forming a second resist mask disposed with being separated from each side surface of the redistribution wiring, forming a redistribution wiring protective metal film over upper and side surfaces of the exposed redistribution wiring with the second resist mask as a mask, removing the second resist mask by a dissolving solution, attaching a dry film over the semiconductor wafer and exposing the electrode forming area lying over the redistribution wiring, forming a post electrode in the electrode forming area with the dry film as a mask, removing the dry film by a removal solvent, and removing the redistribution wiring protective metal film after the removal of the dry film.

1 . A semiconductor device comprising:
 a semiconductor substrate;   an electrode pad electrically connected to an internal circuit formed in the semiconductor substrate;   an insulating film formed with a through hole exposing the electrode pad;   a first bedding metal layer formed over the exposed electrode pad and the insulating film, wherein the first bedding metal layer is connected with the electrode pad;   a redistribution wiring electrically connected to the electrode pad via the first bedding metal layer interposed therebetween and extended over the first bedding metal layer;   a post electrode formed over the redistribution wiring;   a second bedding metal layer formed between the redistribution wiring and the post electrode; and   a sealing layer formed over the redistribution wiring and the insulating film so as to cover a side surface of the post electrode and expose a top surface of the post electrode.   
     
     
         2 . The semiconductor device according to  claim 1 , wherein the second bedding metal layer is formed directly on the redistribution wiring. 
     
     
         3 . The semiconductor device according to  claim 2 , wherein the post electrode is formed directly on the second bedding metal layer. 
     
     
         4 . The semiconductor device according to  claim 1 , wherein the post electrode includes copper. 
     
     
         5 . The semiconductor device according to  claim 1 , further comprising:
 a bump electrode formed on the top surface of the post electrode.   
     
     
         6 . The semiconductor device according to  claim 1 , further comprising:
 another redistribution wiring formed on the insulating film wherein, the another redistribution wiring is positioned away from the redistribution wiring;   a redistribution wiring protective insulating film formed on the insulating film and under the sealing layer wherein the redistribution wiring protective insulating film is embedded between the redistribution wiring and the another redistribution wiring.   
     
     
         7 . The semiconductor device according to  claim 6 , wherein the redistribution wiring protective insulating film includes polyimide. 
     
     
         8 . The semiconductor device according to  claim 1 , wherein the sealing layer includes an epoxy resin 
     
     
         9 . A semiconductor device comprising:
 a semiconductor substrate;   an electrode pad electrically connected to an internal circuit formed in the semiconductor substrate;   an insulating film formed with a through hole in which the electrode pad is exposed;   a first bedding metal layer formed over the exposed electrode pad and the insulating film, wherein the first bedding metal layer is connected with the electrode pad;   a redistribution wiring extended over the first bedding metal layer, wherein the redistribution wiring is electrically connected to the electrode pad via the first bedding metal layer;   a second bedding metal layer formed on the redistribution wiring;   a bump electrode electrically connected to the second bedding metal layer; and   a sealing layer formed over the redistribution wiring and the insulating film, wherein the bump electrode is positioned above the sealing layer.   
     
     
         10 . The semiconductor device according to  claim 9 , wherein the second bedding metal layer is formed directly on the redistribution wiring. 
     
     
         11 . The semiconductor device according to  claim 9 , wherein the bump electrode formed over the second bedding metal layer. 
     
     
         12 . The semiconductor device according to  claim 9 , further comprising:
 another redistribution wiring formed on the insulating film, wherein the another redistribution wiring is positioned away from the redistribution wiring;   a redistribution wiring protective insulating film formed on the insulating film and under the sealing layer, wherein the redistribution wiring protective insulating film is embedded between the redistribution wiring and the another redistribution wiring.   
     
     
         13 . The semiconductor device according to  claim 12 , wherein the redistribution wiring protective insulating film includes polyimide. 
     
     
         14 . The semiconductor device according to  claim 9 , wherein the sealing layer includes an epoxy resin.