Flash Memory Device

Abstract

A method of manufacturing a flash memory device is disclosed. The method includes the steps of providing a semiconductor substrate in which a cell region and a select transistor region are defined, etching the semiconductor substrate in the select transistor region so that there is a first step between the cell region and the select transistor region, forming a cell gate in the cell region, and forming a transistor in the select transistor region.

1 . A flash memory device, comprising:
 a semiconductor substrate having a step between a cell region and a select transistor region;   a transistor formed in the select transistor region; and   a memory cell formed in the cell region.   
     
     
         2 . The flash memory device of  claim 1 , wherein a width of the select transistor region has 4 to 6 times larger than that of the transistor. 
     
     
         3 . The flash memory device of  claim 1 , wherein the step has a height ranging from about 300 Å to about 1000 Å. 
     
     
         4 . The flash memory device of  claim 1 , wherein a source contact plug and a drain contact plug are formed in the select transistor region.