Device and device manufacture method

Abstract

A device is provided with: a first substrate mainly containing silicon dioxide; a second substrate mainly containing silicon, compound semiconductor, silicon dioxide or fluoride; and a bonding functional intermediate layer arranged between the first substrate and the second substrate. The first substrate is bonded to the second substrate thorough room temperature bonding in which a sputtered first surface of the first substrate is contacted with a sputtered second surface of the second substrate via the bonding functional intermediate layer. Here, the material of the bonding functional intermediate layer is selected from among optically transparent materials which are oxide, fluoride, or nitride, the materials being different from the main component of the first substrate and different from the main component of the second substrate.

1 . A device, comprising:
 a first substrate mainly containing silicon dioxide;   a second substrate mainly containing silicon, compound semiconductor, silicon dioxide or fluoride; and   a bonding functional intermediate layer arranged between said first substrate and said second substrate,   wherein said first substrate is bonded to said second substrate thorough room temperature bonding in which a sputtered first surface of said first substrate is contacted with a sputtered second surface of said second substrate via said bonding functional intermediate layer, and   wherein material of said bonding functional intermediate layer is selected from among optically transparent materials which are oxide, fluoride, or nitride, the materials being different from the main component of the first substrate and different from the main component of the second substrate.   
     
     
         2 . The device according to  claim 1 , wherein said first substrate is quartz glass, glass or quartz having a crystal structure. 
     
     
         3 . The device according to  claim 2 , wherein said second substrate is quartz glass, glass or quartz having a crystal structure. 
     
     
         4 . The device according to  claim 3 , wherein material of said bonding functional intermediate layer is aluminum oxide, titanium dioxide, zirconium dioxide, or hafnium dioxide. 
     
     
         5 . The device according to  claim 4 , wherein said first substrate has optical transparency,
 wherein a photo detector is formed on said second substrate, which device generates an output signal or electromotive force in response to external light transmitted through an interface between said first and second substrates, and   wherein said first and second substrates seal said photo detector.   
     
     
         6 . The device according to  claim 5 , wherein said photo detector is a CCD or CMOS sensor. 
     
     
         7 . The device according to  claim 5 , wherein said photo detector is a solar cell, a photoelectric conversion device, or a functional device converting electromagnetic wave into electric power. 
     
     
         8 . The device according to  claim 4 , wherein said first substrate has optical transparency,
 wherein a light emitting device is formed on said second substrate, which device generates light transmitting through an interface between said first and second substrates, and   wherein said first and second substrates seal said light emitting device.   
     
     
         9 . The device according to  claim 4 , wherein said first substrate has optical transparency,
 wherein said second substrate has optical transparency,   wherein said first and second substrates seal an optical signal transmission device which transmits an optical signal transmitting through an interface between said first and second substrates.   
     
     
         10 . A device manufacture method, comprising:
 sputtering a first surface of a first substrate mainly containing silicon dioxide; and   preparing a bonded substrate by contacting said first surface with a second surface of a second substrate mainly containing silicon, compound semiconductor, silicon dioxide, or fluoride via a bonding functional intermediate layer to thereby bond said first substrate to said second substrate,   wherein material of said bonding functional intermediate layer is selected from among optically transparent materials which are oxide, fluoride, or nitride, the materials being different from the main component of the first substrate, and different from the main component of the second substrate.   
     
     
         11 . The device manufacture method according to  claim 10 , wherein said first surface is subject to sputtering after said bonding functional intermediate layer is formed thereon. 
     
     
         12 . The device manufacture method according to  claim 11 , further comprising:
 sputtering said second surface simultaneously with the sputtering of said first surface.   
     
     
         13 . The device manufacture method according to  claim 10 , wherein said first substrate is quartz glass, glass or quartz having a crystal structure. 
     
     
         14 . The device manufacture method according to  claim 13 , wherein said second substrate is quartz glass, glass or quartz having a crystal structure. 
     
     
         15 . The device manufacture method according to  claim 14 , wherein material of said bonding functional intermediate layer is aluminum oxide, titanium dioxide, zirconium dioxide, or hafnium dioxide. 
     
     
         16 . The device manufacture method according to  claim 11 , wherein said first substrate is quartz glass, glass or quartz having a crystal structure. 
     
     
         17 . The device manufacture method according to  claim 12 , wherein said first substrate is quartz glass, glass or quartz having a crystal structure.