Infrared sensor manufactured by method suitable for mass production

Abstract

An infrared sensor manufacturing method according to this invention includes a step of forming a bridge structure of an insulating material on an Si substrate, a step of forming a vanadium oxide thin film on the bridge structure by a dry film forming method, a step of irradiating laser light onto the vanadium oxide thin film to thereby change material properties thereof, a step of forming the vanadium oxide thin film with the changed material properties into a bolometer resistor having a predetermined pattern, and a step of forming a protective layer of an insulating material so as to cover the bolometer resistor having the predetermined pattern and the bridge structure.

1 . An infrared sensor manufactured by a method of manufacturing a bolometer-type infrared sensor that changes a temperature of a light-incident portion thereof by absorption of incident infrared light so as to change an electrical resistance value of a resistor by a temperature change, thereby outputting a signal indicative of a radiation intensity of the incident infrared light, said method comprising the steps of:
 forming a bridge structure of an insulating material on an insulating substrate;   forming a vanadium oxide thin film on said bridge structure by a dry film forming method;   irradiating laser light onto said vanadium oxide thin film to thereby change material properties thereof;   forming said vanadium oxide thin film with the changed material properties into a predetermined pattern as said resistor; and   forming a protective layer of an insulating material so as to cover said vanadium oxide thin film formed into the predetermined pattern and said bridge structure.