Cmp system utilizing halogen adduct

Abstract

The invention provides a method of polishing a substrate comprising (i) providing a chemical-mechanical polishing system comprising (a) a polishing component selected from an abrasive, a polishing pad, or both an abrasive and a polishing pad, (b) an aqueous carrier, and (c) the halogen adduct resulting from the reaction of (1) an oxidizing agent selected from the group consisting of iodine, bromine, and a combination thereof, and (2) a carbon acid having a pKa of about 3 to about 14, wherein the halogen adduct is present in a concentration of about 0.001 mM or more in the aqueous carrier, (ii) contacting the substrate with the polishing system, and (iii) abrading at least a portion of the surface of the substrate with the polishing system to polish the substrate.

1 . A method of polishing a substrate comprising:
 (i) providing a chemical-mechanical polishing system comprising:
 (a) a polishing component selected from an abrasive, a polishing pad, or both an abrasive and a polishing pad, 
 (b) an aqueous carrier, and 
 (c) the halogen adduct resulting from the reaction of (1) an oxidizing agent selected from the group consisting of iodine, bromine, and a combination thereof, and (2) a carbon acid having a pKa of about 3 to about 14, wherein the halogen adduct is present in a concentration of about 0.001 mM or more in the aqueous carrier, 
   (ii) contacting the substrate with the polishing system, and   (iii) abrading at least a portion of the surface of the substrate with the polishing system to polish the substrate.   
     
     
         2 . The method of  claim 1 , wherein the substrate comprises copper. 
     
     
         3 . The method of  claim 1 , wherein the substrate comprises a noble metal. 
     
     
         4 . The method of  claim 1 , wherein the oxidizing agent is iodine, and wherein the halogen adduct is present in a concentration of about 0.001 mM to about 30 mM in the aqueous carrier. 
     
     
         5 . The method of  claim 4 , wherein the halogen adduct is present in a concentration of about 0.004 mM to about 8 mM in the aqueous carrier. 
     
     
         6 . The method of  claim 1 , wherein the polishing system further comprises a second oxidizing agent, wherein the second oxidizing agent comprises a quinone moiety. 
     
     
         7 . The method of  claim 1 , further comprising a second oxidizing agent selected from the group consisting of hydrogen peroxide, potassium peroxymonosulfate, persulfate salts, periodate salts, perchlorate salts, iodate salts, potassium permanganate, bromate salts, chlorate salts, and n-methylmorpholine-N-oxide. 
     
     
         8 . The method of  claim 1 , wherein the carbon acid has a pKa in the range of about 6 to about 13. 
     
     
         9 . The method of  claim 1 , wherein the carbon acid has the following structure: 
       
         
           
           
               
               
           
         
       
       wherein R 1  is selected from the group consisting of OH, R 4 , and OR 4 , wherein R 4  is a substituted or unsubstituted C 1 -C 4  alkyl; R 2  is selected from the group consisting of 
       
         
           
           
               
               
           
         
       
       wherein n is 0 or 1; and R 3  is selected from the group consisting of H, NO 2 , and a substituted or unsubstituted C 1 -C 6  alkyl. 
     
     
         10 . The method of  claim 9 , wherein R 2  is 
       
         
           
           
               
               
           
         
       
     
     
         11 . The method of  claim 1 , wherein the carbon acid has the following structure: 
       
         
           
           
               
               
           
         
       
       wherein R 5  is selected from the group consisting of NO 2 , CN, HSO 3 , F, Cl, Br, I, CF 3 , CO 2 CF 3 , CO 2 CH 2 CF 3 , CO 2 CH(CF 3 ) 2 , SO 2 CF 3 , and SO 1 R 8 , wherein le is a substituted or unsubstituted C 1 -C 4  alkyl; and R 6  and R 7  are independently selected from the group consisting of H, R 5 , and substituted or unsubstituted C 1 -C 4  alkyls; or R 6  and R 7  are joined together to form a 4-8 membered ring. 
     
     
         12 . The method of  claim 1 , wherein the carbon acid is selected from the group consisting of acetyl acetone, ethylacetoacetate, dimethyl malonate, malonamide, malonic acid, methyl malonate monoamide, diethyl nitromalonate, phenyl malonic acid, 1,3-acetonedicarboxylic acid, aceto acetamide, dimethyl methylmalonate, and nitromethane. 
     
     
         13 . The method of  claim 1 , wherein the polishing component comprises an abrasive suspended in the aqueous carrier, and wherein the abrasive is a metal oxide selected from the group consisting of alumina, silica, ceria, zirconia, titania, germania, and combinations thereof. 
     
     
         14 . The method of  claim 13 , wherein the metal oxide abrasive is silica. 
     
     
         15 . The method of  claim 1 , wherein the polishing component comprises an abrasive, and wherein the abrasive is fixed to the polishing pad. 
     
     
         16 . The method of  claim 1 , wherein the polishing system further comprises an acid. 
     
     
         17 . The method of  claim 16 , wherein the acid is selected from the group consisting of acetic acid, nitric acid, phosphoric acid, oxalic acid, and combinations thereof. 
     
     
         18 . The method of  claim 16 , wherein the acid is present in an amount sufficient to adjust the pH of the aqueous carrier and any other components dissolved or suspended therein to a range of about 2 to about 6. 
     
     
         19 . The method of  claim 18 , wherein the acid is present in an amount sufficient to adjust the pH of the aqueous carrier and any other components dissolved or suspended therein to a range of about 2 to about 3.