Method for preparing substrate with periodical structure
Abstract
A method for preparing a substrate with periodical structure, comprising the following steps: (A) providing a substrate and plural nano-sized balls, wherein the nano-sized balls are arranged on the surface of the substrate; (B) depositing a cladding layer on partial surface of the substrate and the gaps between the nano-sized balls; (C) removing the nano-sized balls; (D) etching the substrate by using the cladding layer as a mask; and (E) removing the mask to form a periodical structure on the surface of the substrate. In the present invention, the nano-sized balls are used as a template for forming the mask. Hence, compared with the lithography, when the method of the present invention is used to prepare a substrate with a periodical structure, the duration of the process and the manufacturing cost can be decreased.
Claims
exact text as granted — not AI-modified1 . A method for preparing a substrate with a periodical structure, comprising:
(A) providing a substrate and plural nano-sized balls, wherein the nano-sized balls are arranged on a surface of the substrate; (B) depositing a cladding layer on a partial surface of the substrate and the gaps between the nano-sized balls; (C) removing the nano-sized balls; (D) etching the substrate by using the cladding layer as an etching template; and (E) removing the etching template to form the periodical structure on the surface of the substrate.
2 . The method as claimed in claim 1 , further comprising a step (F) after the step (E): re-etching the surface of the substrate.
3 . The method as claimed in claim 1 , wherein the periodical structure is a nano-sized periodical structure.
4 . The method as claimed in claim 1 , wherein the step (A) of arranging the nano-sized balls on the surface of the substrate comprises the following steps:
(A1) providing the substrate, and a colloid solution in a container, wherein the colloid solution comprises the nano-sized balls and a surfactant; (A2) placing the substrate in the container, and the colloid solution covering the surface of the substrate; and (A3) adding a volatile solution into the container to obtain the substrate with the nano-sized balls formed thereon.
5 . The method as claimed in claim 1 , wherein the cladding layer is formed on partial surface of the substrate and the gaps between the nano-sized balls through CVD or PVD.
6 . The method as claimed in claim 1 , wherein the substrate is etched by an etching buffer in the step (D).
7 . The method as claimed in claim 6 , wherein the etching buffer comprises an alkaline solution, an alcohol, and water.
8 . The method as claimed in claim 6 , wherein the etching buffer comprises an acidic solution, an alcohol, and water.
9 . The method as claimed in claim 7 , wherein the alkaline solution is a solution of NaOH, KOH, NH 4 OH, CeOH, RbOH, (CH 3 ) 4 NOH, C 2 H 4 (NH 2 ) 2 , or N 2 H 4 .
10 . The method as claimed in claim 7 , wherein the alcohol is ethanol or isopropanol.
11 . The method as claimed in claim 8 , wherein the acidic solution is HF, BOE containing HF and NH 4 F, HCl, HNO 3 , H 2 PO 4 , H 2 SO 4 , CH 3 COOH, or a combination thereof, or the acidic solution is Amine Callates containing ethanolamine, gallic acid, water, hydrogen peroxide, and a surfactant.
12 . The method as claimed in claim 8 , wherein the alcohol is ethanol or isopropanol.
13 . The method as claimed in claim 1 , wherein the periodical structure on the surface of the substrate has plural micro-cavities.
14 . The method as claimed in claim 13 , wherein the micro-cavities are arranged in an array.
15 . The method as claimed in claim 13 , wherein the micro-cavities are each in an inverted awl-shape, an inverted cone-shape, a cylinder-shape, an inverted truncated awl-shape, or an inverted truncated cone-shape.
16 . The method as claimed in claim 1 , wherein the material of the substrate is P-type single crystalline silicon, N-type single crystalline silicon, P-type polycrystalline silicon, N-type polycrystalline silicon, P-type amorphous silicon, N-type amorphous silicon, P-type GaAs, N-type GaAs, P-type InP, N-type InP, P-type GaInP, N-type GaAnP, P-type GaN, N-type GaN, P-type CuInSe 2 , N-type CuInSe 2 , ITO, silicon carbide, silicon nitride, quartz, ZnO, or ZnO doped with Al.
17 . The method as claimed in claim 1 , wherein the substrate is a sapphire substrate.
18 . The method as claimed in claim 1 , wherein the substrate is a glass substrate, or a glass substrate with a transparent conducting oxide (TCO) layer formed thereon.
19 . The method as claimed in claim 1 , wherein the material of the cladding layer is silicon oxides, silicon nitrides, silicon oxynitrides, Al 2 O 3 , ZnO, ITO, ZnO doped with Al, Cr, Ta, W, V, Ni, Sn, Fe, Cu, Mo, Ti, Al, Ag, Au, Pt, Pd, photoresist, PMMA, or PS.
20 . The method as claimed in claim 1 , wherein the material of the nano-sized balls is silicon oxides, ceramics, PMMA, titanium oxides, or PS.
21 . The method as claimed in claim 1 , wherein the thickness of the cladding layer is less than the diameters of the nano-sized balls.
22 . The method as claimed in claim 1 , wherein the diameters of the nano-sized balls are 100 nm˜2.5 μm.
23 . The method as claimed in claim 1 , wherein the diameters of the nano-sized balls are the same.Join the waitlist — get patent alerts
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