Semiconductor manufacturing apparatus and pattern formation method

Abstract

In a pattern formation method employing immersion lithography, after a resist film is formed on a wafer, pattern exposure is performed by selectively irradiating the resist film with exposing light with a liquid including an unsaturated aliphatic acid, such as sunflower oil or olive oil including oleic acid, provided on the resist film. After the pattern exposure, the resist film is developed so as to form a resist pattern made of the resist film.

1 - 16 . (canceled) 
     
     
         17 . A semiconductor manufacturing apparatus comprising:
 an exposure unit for performing pattern exposure with a liquid provided between a resist film and an exposure lens;
 a liquid supplying section for supplying said liquid onto said resist film; 
 a liquid discharging section for discharging said liquid provided on said resist film from said resist film; 
 a temperature measuring unit for measuring a temperature of said liquid and an atmosphere temperature of said exposure unit; 
 an air conditioning unit for adjusting said atmosphere temperature; and 
 a temperature control unit for controlling said air conditioning unit on the basis of said temperature of said liquid and said atmosphere temperature measured by said temperature measuring unit in such a manner that said atmosphere temperature is lower than said temperature of said liquid. 
   
     
     
         18 . The semiconductor manufacturing apparatus of  claim 17 ,
 wherein said exposure unit and said air conditioning unit are provided within one chamber.   
     
     
         19 . A semiconductor manufacturing apparatus comprising:
 a wafer holding section;   an exposure unit for performing pattern exposure with a liquid provided between a resist film formed on said wafer and an exposure lens;   a liquid supplying section for supplying said liquid onto said resist film;   a liquid discharging section for discharging said liquid provided on said resist film from said resist film;   a temperature measuring unit for measuring a temperature of said liquid and a temperature of said wafer holding section; and   a cooling section for cooling said wafer holding section.   
     
     
         20 . The semiconductor manufacturing apparatus of  claim 19 , further comprising a temperature control unit for controlling a temperature of said cooling section on the basis of said temperature of said liquid and said temperature of said wafer holding section measured by said temperature measuring unit. 
     
     
         21 . The semiconductor manufacturing apparatus of  claim 17 ,
 wherein said liquid is water or perfluoropolyether.   
     
     
         22 . The semiconductor manufacturing apparatus of  claim 19 ,
 wherein said liquid is water or perfluoropolyether.   
     
     
         23 . The semiconductor manufacturing apparatus of  claim 17 ,
 wherein a light source of said exposure unit is KrF excimer laser, Xe2 laser, ArF excimer laser, F2 laser, KrAr laser or Ar2 laser.   
     
     
         24 . The semiconductor manufacturing apparatus of  claim 19 ,
 wherein a light source of said exposure unit is KrF excimer laser, Xe2 laser, ArF excimer laser, F2 laser, KrAr laser or Ar2 laser.   
     
     
         25 . (canceled)