Infrared sensor IC, and infrared sensor and manufacturing method thereof

Abstract

An infrared sensor IC and an infrared sensor, which are extremely small and are not easily affected by electromagnetic noise and thermal fluctuation, and a manufacturing method thereof are provided. A compound semiconductor that has a small device resistance and a large electron mobility is used for a sensor ( 2 ), and then, the compound semiconductor sensor ( 2 ) and an integrated circuit ( 3 ), which processes an electrical signal output by the compound semiconductor sensor ( 2 ) and performs an operation, are arranged in a single package using hybrid formation. In this manner, an infrared sensor IC that can be operated at room temperature can be provided by a microminiature and simple package that is not conventionally produced.

1 . An infrared sensor IC comprising:
 a compound semiconductor sensor, having a compound semiconductor including indium and antimony, and detecting an infrared radiation by said compound semiconductor to output an electric signal indicating the detection; and   an integrated circuit processing said electric signal output by said compound semiconductor sensor to perform a predetermined operation,   wherein said compound semiconductor sensor and said integrated circuit are arranged in a single package in a hybrid manner.   
     
     
         2 . The infrared sensor IC according to  claim 1 , wherein said compound semiconductor sensor comprises
 a substrate;   a compound semiconductor layer that is formed on said substrate with a buffer layer which is a layer for relaxing a lattice mismatch, the buffer layer being sandwiched between the compound semiconductor layer and the substrate.   
     
     
         3 . The infrared sensor IC according to  claim 2 , wherein said buffer layer is one of AlSb, AlGaSb, AlGaAsSb, AlInSb, GaInAsSb and AlInAsSb. 
     
     
         4 . The infrared sensor IC according to any of  claims 1  to  3 , wherein said compound semiconductor layer is formed of a single first compound semiconductor layer, and
 said first compound semiconductor layer is one of InSb, InAsSb, InSbBi, InAsSbBi, InTlSb, InTlAsSb, InSbN and InAsSbN.   
     
     
         5 . The infrared sensor IC according to  claim 4 , wherein said first compound semiconductor layer is p-type doped. 
     
     
         6 . The infrared sensor IC according to  claim 4 , wherein said compound semiconductor layer comprises:
 a second compound semiconductor layer including indium and antimony; and   a third compound semiconductor layer that is formed on said second compound semiconductor layer, so as to be heterojunction with said second compound semiconductor layer, the third compound semiconductor layer including antimony and different from said second compound semiconductor layer.   
     
     
         7 . The infrared sensor IC according to  claim 6 , wherein a combination of said third compound semiconductor layer and said second compound semiconductor layer is one of GaSb/InSb, GaInSb/InSb, InSb/InAsSb, GaSb/InAsSb and GaInSb/InAsSb. 
     
     
         8 . The infrared sensor IC according to  claim 6 , wherein both said second compound semiconductor layer and said third compound semiconductor layer, or only said third compound semiconductor layer is p-type doped. 
     
     
         9 . The infrared sensor IC according to  claim 4 , wherein said compound semiconductor layer comprises:
 a fourth compound semiconductor layer that includes at least one of indium or antimony; and   a fifth compound semiconductor layer that is formed on said fourth compound semiconductor layer, so as to be heterojunctional with said fourth compound semiconductor layer, and that is a material including at least one of indium or antimony and differs from that of said fourth compound semiconductor layer, wherein said fourth compound semiconductor layer and said fifth compound semiconductor layer form a superlattice structure, periodically stacked.   
     
     
         10 . The infrared sensor IC according to  claim 9 , wherein a combination of said fifth compound semiconductor layer and said fourth compound semiconductor layer is one of InAs/GaSb, InAs/GaInSb, InAs/GaAsSb, InAsSb/GaSb, InAsSb/GaAsSb and InAsSb/GaInSb. 
     
     
         11 . The infrared sensor IC according to any of  claims 1  to  3 , wherein said compound semiconductor layer forms a p-n junction of stacked layers comprising a compound semiconductor layer which is an n-type doped material including indium and antimony, and a compound semiconductor layer which is a p-type doped material including indium and antimony. 
     
     
         12 . The infrared sensor IC according to  claim 11 , wherein said p-n junction stacked includes one of a p-type doped InSb/an n-type doped InSb, a p-type doped InSb/a p-type doped InAsSb/an n-type doped InSb, a p-type doped GaInSb/a p-type doped InAsSb/an n-type doped GaInSb, and a p-type doped GaInSb/a p-type doped InSb/an n-type doped GaInSb. 
     
     
         13 - 28 . (canceled)