US2010261001A1PendingUtilityA1
Nanostructured thin-film formed by utilizing oblique-angle deposition and method of the same
Est. expiryAug 14, 2028(~2 yrs left)· nominal 20-yr term from priority
Y10T428/249953Y10T428/249978C23C 14/226C23C 14/086H10F 77/244H10F 71/138H10F 77/251H10F 77/247Y02E10/50
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Abstract
The present invention discloses a transparent conductive nanostructured thin-film by oblique-angle deposition and method of the same. An electron beam system is utilized to evaporate the target source. Evaporation substrate is disposed on a plurality of adjustable sample stage. Multiple gas control valve and heat source is provided to control the gas flow and temperature within the process chamber. An annealing process is performed after the evaporation to improve the thin-film structure and optoelectronic properties.
Claims
exact text as granted — not AI-modified1 . A film formed by electron bean oblique-angle deposition, wherein said film comprises porous nanorods with narrow end to form a single layer structure with graded refractive index and better transmissivity.
2 . The film of claim 1 , wherein said target source comprises indium tin oxide (ITO), aluminum zinc oxide (AZO), or ZnO.
3 . The film of claim 1 , wherein said evaporation substrate comprises Si substrate, GaAs substrate, glass substrate, or flexible substrate.Join the waitlist — get patent alerts
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