Semiconductor device and method of forming the same

Abstract

A semiconductor device includes a chip stacked structure. The chip stacked structure may include, but is not limited to, first and second semiconductor chips. The first semiconductor chip has a first thickness. The second semiconductor chip has a second thickness that is thinner than the first thickness.

1 . A semiconductor device comprising:
 a chip stacked structure comprising first and second semiconductor chips,   the first semiconductor chip having a first thickness, and   the second semiconductor chip having a second thickness that is thinner than the first thickness.   
     
     
         2 . The semiconductor device according to  claim 1 , wherein the first semiconductor chip has a first circuit formation surface that faces toward the second semiconductor chip. 
     
     
         3 . The semiconductor device according to  claim 1 , further comprising:
 a wiring board on which the chip stacked structure is provided,   wherein the second semiconductor chip is disposed between the wiring board and the first semiconductor chip.   
     
     
         4 . The semiconductor device according to  claim 1 , further comprising:
 a wiring board electrically connected to the chip stacked structure; and   a supporting substrate that supports the chip stacked structure,   wherein the chip stacked structure is disposed between the wiring board and the supporting substrate.   
     
     
         5 . The semiconductor device according to  claim 4 , wherein the first semiconductor chip is closest to the wiring board, and
 the second semiconductor chip is closest to the supporting substrate, the second semiconductor chip is supported by the supporting substrate.   
     
     
         6 . The semiconductor device according to  claim 1 , wherein the first thickness is greater than 1.5 times of the second thickness. 
     
     
         7 . The semiconductor device according to  claim 1 , wherein the first semiconductor chip has a first through electrode, and first and second bonding pads, the first and second bonding pads are electrically connected to each other through the first through electrode,
 the second semiconductor chip has a second through electrode, and third and fourth bonding pads, the third and fourth bonding pads are electrically connected to each other through the second through electrode, and   the second pad and the third pad are bonded to each other.   
     
     
         8 . The semiconductor device according to  claim 1 , wherein the chip stacked structure further comprises a third semiconductor chip between the first semiconductor chip and the second semiconductor chip, the third semiconductor chip has a third thickness thinner than the first thickness. 
     
     
         9 . The semiconductor device according to  claim 8 , wherein the first semiconductor chip has a first circuit formation surface that faces toward the third semiconductor chip,
 the second semiconductor chip has a second circuit formation surface that faces toward the third semiconductor chip, and   the third semiconductor chip has a third circuit formation surface that faces toward the second semiconductor chip.   
     
     
         10 . The semiconductor device according to  claim 9 , further comprising:
 a wiring board on which the chip stacked structure is provided,   wherein the first semiconductor chip is more distant from the wiring board than the second semiconductor chip, and the second semiconductor chip is closest to the wiring board.   
     
     
         11 . The semiconductor device according to  claim 8 , further comprising:
 a wiring board on which the chip stacked structure is provided; and   a supporting substrate that supports the chip stacked structure,   wherein the first semiconductor chip is closest to the wiring board,   the second semiconductor chip is closest to the supporting substrate,   the first semiconductor chip has a first circuit formation surface that faces toward the third semiconductor chip,   the second semiconductor chip has a second circuit formation surface that faces toward the supporting substrate, and   the third semiconductor chip has a third circuit formation surface that faces toward the second semiconductor chip.   
     
     
         12 . The semiconductor device according to  claim 1 , further comprising:
 a first sealing material that seals the chip stacked structure.   
     
     
         13 . The semiconductor device according to  claim 12 , further comprising:
 a second sealing material that covers the first sealing material.   
     
     
         14 . A semiconductor device comprising:
 a wiring board; and   a chip stacked structure disposed over the wiring board, the chip stacked structure comprising a plurality of semiconductor chips, a first one of the plurality of semiconductor chips being more distant from the wiring board than other of the plurality of semiconductor chips, and the first one of the plurality of semiconductor chips being thicker than the other of the plurality of semiconductor chips.   
     
     
         15 . The semiconductor device according to  claim 14 , wherein the first one of the plurality of semiconductor chips has a first circuit formation surface that faces toward the other of the plurality of semiconductor chips. 
     
     
         16 . The semiconductor device according to  claim 15 , wherein the first circuit formation surface is electrically connected through the other of the plurality of semiconductor chips to the wiring board. 
     
     
         17 . A semiconductor device comprising:
 a wiring board;   a supporting substrate; and   a chip stacked structure disposed between the wiring board and the supporting substrate, the chip stacked structure comprising a plurality of semiconductor chips, a first one of the plurality of semiconductor chips being more distant from the supporting substrate than other of the plurality of semiconductor chips, and the first one of the plurality of semiconductor chips being thicker than the other of the plurality of semiconductor chips.   
     
     
         18 . The semiconductor device according to  claim 17 , wherein the first one of the plurality of semiconductor chips has a first circuit formation surface that faces toward the other of the plurality of semiconductor chips. 
     
     
         19 . The semiconductor device according to  claim 17 , wherein the plurality of semiconductor chips are electrically connected to each other, and electrically connected to the wiring board. 
     
     
         20 . The semiconductor device according to  claim 17 , wherein the chip stacked structure is adhered to the supporting substrate.