Ceramic substrate, method of manufacturing ceramic substrate, and method of manufacturing power module substrate

Abstract

Disclosed is a ceramic substrate including silicon in which the concentration of a silicon oxide and a silicon composite oxide in the surface thereof is less than or equal to 2.7 Atom %.

1 . A ceramic substrate comprising silicon,
 wherein the concentration of a silicon oxide and a silicon composite oxide in the surface of the ceramic substrate is less than or equal to 2.7 Atom %.   
     
     
         2 . The ceramic substrate according to  claim 1 ,
 wherein the concentration is measured by an electron probe microanalyzer.   
     
     
         3 . The ceramic substrate according to  claim 1 ,
 wherein the ceramic substrate is formed by dividing a ceramic base material including silicon along scribe lines that are formed in the surface of the ceramic base material.   
     
     
         4 . A method of manufacturing a ceramic substrate, comprising:
 radiating energy light to the surface of a ceramic base material including silicon to form scribe lines in the surface of the ceramic base material; and   performing a surface treatment on the ceramic base material having the scribe lines formed therein,   wherein the concentration of a silicon oxide and a silicon composite oxide in the surface of the ceramic base material having the scribe lines formed therein is less than or equal to 2.7 Atom %.   
     
     
         5 . The method of manufacturing a ceramic substrate according to  claim 4 ,
 wherein the concentration is measured by an electron probe microanalyzer.   
     
     
         6 . A method of manufacturing a ceramic substrate, comprising:
 radiating energy light with an energy that is greater than or equal to a second harmonic wave of a YAG laser to the surface of a ceramic base material including silicon to form scribe lines in the surface of the ceramic base material,   wherein the concentration of a silicon oxide and a silicon composite oxide in the surface of the ceramic base material having the scribe lines formed therein is less than or equal to 2.7 Atom %.   
     
     
         7 . The method of manufacturing a ceramic substrate according to  claim 6 ,
 wherein the concentration is measured by an electron probe microanalyzer.   
     
     
         8 . A method of manufacturing a power module substrate, comprising:
 radiating energy light to the surface of a ceramic base material including silicon to form scribe lines in the surface of the ceramic base material;   performing a surface treatment on the ceramic base material having the scribe lines formed therein;   dividing the ceramic base material along the scribe lines to form a ceramic substrate; and   bonding metal members to the ceramic substrate,   wherein the concentration of a silicon oxide and a silicon composite oxide in the surface of the ceramic base material having the scribe lines formed therein is less than or equal to 2.7 Atom %.   
     
     
         9 . The method of manufacturing a power module substrate according to  claim 8 ,
 wherein the concentration is measured by an electron probe microanalyzer.   
     
     
         10 . The method of manufacturing a power module substrate according to  claim 8 ,
 wherein the metal members are made of aluminum.   
     
     
         11 . The method of manufacturing a power module substrate according to  claim 8 ,
 wherein the metal members are brazed to the ceramic substrate.   
     
     
         12 . A method of manufacturing a power module substrate, comprising:
 radiating energy light with an energy that is greater than or equal to a second harmonic wave of a YAG laser to the surface of a ceramic base material including silicon to form scribe lines in the surface of the ceramic base material;   dividing the ceramic base material along the scribe lines to form a ceramic substrate; and   bonding metal members to the ceramic substrate,   wherein the concentration of a silicon oxide and a silicon composite oxide in the surface of the ceramic base material having the scribe lines formed therein is less than or equal to 2.7 Atom %.   
     
     
         13 . The method of manufacturing a power module substrate according to  claim 12 ,
 wherein the concentration is measured by an electron probe microanalyzer.   
     
     
         14 . The method of manufacturing a power module substrate according to  claim 12 ,
 wherein the metal members are made of aluminum.   
     
     
         15 . The method of manufacturing a power module substrate according to  claim 12 ,
 wherein the metal members are brazed to the ceramic substrate.   
     
     
         16 . A method of manufacturing a ceramic substrate, comprising:
 sintering a ceramic base material including silicon; and   performing a surface treatment on the ceramic base material,   wherein the concentration of a silicon oxide and a silicon composite oxide in the surface of the ceramic base material subjected to the surface treatment is less than or equal to 2.7 Atom %.   
     
     
         17 . The method of manufacturing a ceramic substrate according to  claim 16 ,
 wherein the concentration is measured by an electron probe microanalyzer.   
     
     
         18 . The method of manufacturing a ceramic substrate according to  claim 16 ,
 wherein the surface treatment includes dry etching using gas including fluoride ions.   
     
     
         19 . The method of manufacturing a ceramic substrate according to  claim 18 ,
 wherein the gas includes at least one of a carbon fluoride and a nitrogen fluoride.   
     
     
         20 . The method of manufacturing a ceramic substrate according to  claim 16 ,
 wherein the surface treatment includes wet etching using an acid solution including fluoride ions.   
     
     
         21 . A method of manufacturing a power module substrate, comprising:
 sintering a ceramic base material including silicon;   performing a surface treatment on the ceramic base material; and   bonding metal members to a ceramic substrate that is obtained from the ceramic base material subjected to the surface treatment,   wherein the concentration of a silicon oxide and a silicon composite oxide in the surface of the ceramic base material subjected to the surface treatment is less than or equal to 2.7 Atom %.   
     
     
         22 . The method of manufacturing a power module substrate according to  claim 21 ,
 wherein the concentration is measured by an electron probe microanalyzer.   
     
     
         23 . The method of manufacturing a power module substrate according to  claim 21 ,
 wherein the surface treatment includes dry etching using gas including fluoride ions.   
     
     
         24 . The method of manufacturing a power module substrate according to  claim 23 ,
 wherein the gas includes at least one of a carbon fluoride and a nitrogen fluoride.   
     
     
         25 . The method of manufacturing a power module substrate according to  claim 21 ,
 wherein the surface treatment includes wet etching using an acid solution including fluoride ions.   
     
     
         26 . The method of manufacturing a power module substrate according to  claim 21 ,
 wherein the metal members are made of aluminum.   
     
     
         27 . The method of manufacturing a power module substrate according to  claim 21 ,
 wherein the metal members are brazed to the ceramic substrate.