Photoelectric conversion device, its manufacturing method, electronic apparatus, its manufacturing method, semiconductor layer, and its manufacturing method

Abstract

A paste in which semiconductor fine grain such as titanium oxide fine grain or the like and a binder made of a polymer compound are mixed is coated onto a transparent conductive substrate and sintered, thereby forming a semiconductor layer made of the semiconductor fine grain, after that, ultraviolet rays are irradiated to the semiconductor layer and, by using a photocatalyst effect of the semiconductor fine grain, an organic substance remaining in the semiconductor layer is removed.

1 . A method of manufacturing a photoelectric conversion device, comprising:
 coating a transparent conductive substrate with a paste comprising a semiconductor fine grain and a binder made of a polymer compound;   
       sintering the paste at a temperature of between approximately 400° C. to 500° C. to form a semiconductor layer made of the semiconductor fine grain; and
 irradiating the semiconductor layer with ultraviolet rays in atmospheric conditions. 
 
     
     
         2 . The method of  claim 1 , wherein irradiating the semiconductor layer with ultraviolet rays comprises irradiating the semiconductor layer with ultraviolet rays for between approximately 4 and 70 hours.