Semiconductor integrated circuit device

Abstract

A semiconductor integrated circuit device includes a power supply line connected to a power supply terminal, a ground line connected to a ground terminal and a plurality of capacitors connected in parallel between the power supply line and the ground line. The plurality of capacitors include a first capacitor arranged at a first distance from one of the terminals and a second capacitor arranged at a second distance which is larger than the first distance from the one of the terminals, and the first capacitor has a larger area than the second capacitor.

1 . A semiconductor integrated circuit device comprising:
 a first power supply line coupled to a first power supply terminal, the first power supply line having a first node, a second node and a third node in this order from the first power supply terminal;   a second power supply line coupled to a second power supply terminal, the second power supply line having a fourth node, a fifth node and a sixth node in this order from the second power supply terminal;   a first capacitor arranged between the first node and the sixth node;   a second capacitor arranged between the second node and the fifth node;   a third capacitor arranged between the third node and the four node;   wherein a capacitance value of the second capacitor is smaller than that of the first and third capacitors.   
     
     
         2 . The semiconductor integrated circuit device according to  claim 1 , wherein at least either a length or a width of the first capacitor is larger than that of the second capacitor. 
     
     
         3 . The semiconductor integrated circuit device according to  claim 1 , wherein the first capacitor is formed of N1 capacitance devices having a capacitance value of C1 each and in almost same shape,
 the second capacitor is formed of N2 capacitance devices having a capacitance value of C2 each and in almost same shape, and   the semiconductor integrated circuit device satisfies a relationship of C1*N1>C2*N2.   
     
     
         4 . The semiconductor integrated circuit device according to  claim 3 , wherein the capacitance value of C1 is larger than the capacitance value of C2. 
     
     
         5 . The semiconductor integrated circuit device according to  claim 1 , wherein areas of the first and second capacitors are inversely proportional to the distance from the first power supply terminal. 
     
     
         6 . The semiconductor integrated circuit device according to  claim 5 , wherein the first, second and third capacitors are each formed of a plurality of capacitance devices in almost same shape, and
 the total capacitance values of the plurality of capacitance devices of the second capacitor are made to be smaller than the total capacitance values of the plurality of capacitance devices of the first capacitor and smaller than the total capacitance values of the plurality of capacitance devices of the third capacitor.   
     
     
         7 . The semiconductor integrated circuit device according to  claim 1 , further comprising a functional circuit block supplied with a potential via the first power supply line and the second power supply line,
 wherein the second capacitor is provided near the functional circuit block.   
     
     
         8 . The semiconductor integrated circuit device according to  claim 7 , further comprising a plurality of functional circuit blocks supplied with a potential via the first power supply line and the second power supply line,
 wherein the first, second and third capacitors are formed to correspond to the plurality of functional circuit blocks.   
     
     
         9 . The semiconductor integrated circuit device according to  claim 1 , wherein the first, second and third capacitors include a MOS capacitance device, a MIS capacitance device or a MIM capacitance device. 
     
     
         10 . The semiconductor integrated circuit device according to  claim 1 , wherein the first, second and third capacitors have function of a decoupling capacitor and a static electricity protection function. 
     
     
         11 . The semiconductor integrated circuit device according to  claim 1 , wherein electrodes of the first, second and third capacitors are almost square shape. 
     
     
         12 . The semiconductor integrated circuit device according to  claim 1 , wherein electrodes of the first, second and third capacitors are almost rectangle shape. 
     
     
         13 . The semiconductor integrated circuit device according to  claim 1 , wherein at least either a length or a width of the third capacitor is larger than that of the second capacitor. 
     
     
         14 . The semiconductor integrated circuit device according to  claim 1 , wherein the third capacitor is formed of N3 capacitance devices having a capacitance value of C3 each and in almost same shape,
 the second capacitor is formed of N2 capacitance devices having a capacitance value of C2 each and in almost same shape, and   the semiconductor integrated circuit device satisfies a relationship of C3*N3>C2*N2.   
     
     
         15 . The semiconductor integrated circuit device according to  claim 14 , wherein the capacitance value of C3 is larger than the capacitance value of C2. 
     
     
         16 . The semiconductor integrated circuit device according to  claim 1 , wherein areas of the third and second capacitors are inversely proportional to the distance from the second power supply terminal.