Deposition method and a deposition apparatus of fine particles, a forming method and a forming apparatus of carbon nanotubes, and a semiconductor device and a manufacturing method of the same

Abstract

A deposition method of fine particles, includes the steps of irradiating a fine particle beam formed by size-classified fine particles to an irradiated subject under a vacuum state, and depositing the fine particles on a bottom part of a groove structure formed at the irradiated subject.

1 . A deposition apparatus of fine particles, comprising:
 a generating part configured to generate fine particles;   a classifying part configured to size-classify the fine particles to a desired fine diameter; and   an irradiating part configured to irradiate a fine particle beam formed by the fine particles having desired particle diameters to an irradiated subject under a vacuum state.   
     
     
         2 . The deposition apparatus of the fine particles as claimed in  claim 1 ,
 wherein the irradiating part includes an electrostatic lens,   the fine particles are charged, and   the fine particle beam formed by the fine particles is focused by the electrostatic lens.   
     
     
         3 . The deposition apparatus of the fine particles as claimed in  claim 1 ,
 wherein the fine particles are charged, and   the fine particle beam formed by the fine particles is accelerated by an electrical field.   
     
     
         4 . The deposition apparatus of the fine particles as claimed in  claim 1 , further comprising an aerodynamic lens,
 wherein the fine particle beam is focused by the aerodynamic lens.   
     
     
         5 . The deposition apparatus of the fine particles as claimed in  claim 1 ,
 wherein the fine particles are deposited on a bottom part of a groove structure formed at the irradiated subject by irradiating the fine particle beam.   
     
     
         6 . The deposition apparatus of the fine particles as claimed in  claim 1  further comprising, a temperature adjustment mechanism configured to cool the irradiated subject. 
     
     
         7 . A forming method of carbon nanotubes, comprising the steps of:
 irradiating a fine particle beam formed by size-classified catalyst fine particles to an irradiated subject under a vacuum state;   depositing the fine particles on a bottom part of a groove structure formed at the irradiated subject; and   generating a carbon nanotube from the bottom part by using the catalyst fine particles as catalysts.   
     
     
         8 . A forming method of carbon nanotubes, comprising the steps of:
 generating catalyst fine particles;   size-classifying the catalyst fine particles to desired fine diameters;   irradiating a fine particle beam formed by the size-classified catalyst fine particles to an irradiated subject under a vacuum state, so that the catalyst fine particles are deposited on a bottom part of a groove structure formed at the irradiated subject; and   generating a carbon nanotube from the bottom part by using one of the catalyst fine particles as a catalyst.   
     
     
         9 . A forming method of carbon nanotubes, comprising the steps of:
 generating catalyst fine particles;   depositing the catalyst fine particles on a substrate; and   generating the carbon nanotube by using one of the catalyst fine particles as a catalyst;   wherein each step is continuously performed under a designated environment cut off from the outside.   
     
     
         10 . The forming method of the carbon nanotubes as claimed in  claim 9 ,
 wherein the catalyst fine particles are generated by laser ablation.   
     
     
         11 . The forming method of the carbon nanotubes as claimed in  claim 9 , further comprising a step of:
 size-classifying the catalyst fine particles to a desired fine diameter after the catalyst fine particles are generated before the catalyst fine particles are deposited.   
     
     
         12 . The forming method of the carbon nanotubes as claimed in  claim 11 ,
 wherein the catalyst fine particles are classified based on a difference in electrical mobilities of the catalyst fine particles.   
     
     
         13 . The forming method of the carbon nanotubes as claimed in  claim 11 ,
 wherein the catalyst fine particles are classified based on a difference in inertia of the fine particles.   
     
     
         14 . The forming method of the carbon nanotubes as claimed in  claim 11 ,
 wherein the catalyst fine particles are covered with a material different from the catalyst fine particles before or after the classification of the catalyst fine particles.   
     
     
         15 . The forming method of the carbon nanotubes as claimed in  claim 9 ,
 wherein the catalyst fine particles are charged and deposited on the substrate by an electrical field.   
     
     
         16 . The forming method of the carbon nanotubes as claimed in  claim 9 ,
 wherein a fine particle beam formed by the catalyst fine particles irradiated under a vacuum state and the catalyst fine particles are deposited on the substrate.   
     
     
         17 . The forming method of the carbon nanotubes as claimed in  claim 9 ,
 wherein a fine particle beam formed by the size-classified catalyst fine particles is irradiated to an irradiated subject under a vacuum state, and   the catalyst fine particles are deposited on a bottom part of a groove structure formed at the irradiated subject.   
     
     
         18 . A forming apparatus of carbon nanotubes, comprising:
 a fine particle generation part configured to generate fine particles;   a deposition part configured to deposit the catalyst fine particles on a substrate; and   a tube generation part configured to generate a carbon nanotube by using one of the catalyst fine particles as a catalyst;   wherein a series of processes from generation of the catalyst fine particles to generation of the carbon nanotubes is continuously performed under a designated environment cut off from the outside.   
     
     
         19 . The forming apparatus of the carbon nanotubes as claimed in  claim 18 ,
 wherein the catalyst fine particles are generated by laser ablation of the fine particle generation part.   
     
     
         20 . The forming apparatus of the carbon nanotubes as claimed in  claim 18 , further comprising:
 a classification part configured to classify the catalyst fine particles to desired fine diameters after the catalyst fine particles are generated before the catalyst fine particles are deposited.   
     
     
         21 . The forming apparatus of the carbon nanotubes as claimed in  claim 20 ,
 wherein the catalyst fine particles are classified by the classification part based on a difference in electrical mobilities of the catalyst fine particles.   
     
     
         22 . The forming apparatus of the carbon nanotubes as claimed in  claim 20 ,
 wherein the catalyst fine particles are classified by the classification part based on a difference in inertia of the fine particles.   
     
     
         23 . The forming apparatus of the carbon nanotubes as claimed in  claim 18 ,
 wherein the catalyst fine particles are charged and deposited on the substrate by an electrical field.   
     
     
         24 . The forming apparatus of the carbon nanotubes as claimed in  claim 18 ,
 wherein a fine particle beam formed by the size-classified catalyst fine particles is irradiated to an irradiated subject under a vacuum state, by the deposition part.   
     
     
         25 . A semiconductor device, comprising:
 a first conductive part;   an interlayer insulating layer which covers the first conductive part;   a second conductive part which is formed on the interlayer insulating layer;   a groove part which pierces the inter layer insulating layer and exposes the first conductive layer;   wherein the groove part includes a catalyst layer and a carbon nanotube,   the catalyst layer is formed on a surface of the first conductive part, and   the carbon nanotube is formed on the catalyst layer and electrically connects the first conductive layer and the second conductive layer; and   the catalyst layer is formed by fine particles.   
     
     
         26 . The semiconductor device as claimed in  claim 25 ,
 wherein the carbon nanotube has an upper end and a lower end,   the upper end of the carbon nanotube comes in contact with the second conductive part, and   the lower end of the carbon nanotube comes in contact with the catalyst layer.   
     
     
         27 . The semiconductor device as claimed in  claim 25 ,
 wherein the groove part includes a via hole forming part and a wiring groove,   the via hole forming part exposes the first conductive part,   the wiring groove is formed on the via hole forming part, communicates to the via hole forming part, and is filled with a conductive material forming the second conductive part, and   the via hole forming part is filled with a bundle of carbon nanotubes.   
     
     
         28 . The semiconductor device as claimed in  claim 25 ,
 wherein the fine particles are formed separated from each other.   
     
     
         29 . The semiconductor device as claimed in  claim 25 ,
 wherein the fine particles have particle diameters set in a range of 0.4 nm through 20 nm as an average.   
     
     
         30 . The semiconductor device as claimed in  claim 25 ,
 wherein the fine particles include at least one transition metal selected from the group consisting of Co, Ni, Fe, and Mo.   
     
     
         31 . The semiconductor device as claimed in  claim 25 ,
 wherein the carbon nanotube has a diameter set as in a range of 0.4 nm through 20 nm as an average.   
     
     
         32 . A semiconductor device, comprising:
 a substrate;   an insulating layer formed on a main surface of the substrate;   two catalyst layers formed on the insulating layer isolated from each other;   a carbon nanotube formed between the two catalyst layers;   a first conductive part and a second conductive part each of which covers a separate one of the catalyst layers; and   a third conductive part formed on a back surface of the substrate,   wherein an electric current flowing in the carbon nanotube is controlled by an electric voltage and an electric current applied to the third conductive part, and   each of the catalyst layers is formed by fine particles.   
     
     
         33 . A manufacturing method of a semiconductor device, the semiconductor device including a first conductive part and a second conductive part which are provided separated form each other, the method comprising the steps of:
 forming a catalyst layer, which is formed by fine particles, on at least one of the first conductive part and the second conductive part;   forming a carbon nanotube which electrically connects the first conductive part and the second conductive part by using one of the fine particles as a catalyst.   
     
     
         34 . The manufacturing method of the semiconductor device as claimed in  claim 33 ,
 wherein in the step of forming the catalyst layer, the catalyst layer is formed by an electroless plating process.   
     
     
         35 . The manufacturing method of the semiconductor device as claimed in  claim 33 ,
 wherein the fine particles are an initial growth core formed by an electroless plating process.   
     
     
         36 . A manufacturing method of a semiconductor device, the semiconductor device including
 a first conductive part;   an interlayer insulating layer which covers the first conductive part;   a second conductive part which is formed on the interlayer insulating layer; and   a groove part which pierces the inter layer insulating layer and exposes the first conductive layer;   wherein the groove part includes a catalyst layer and a carbon nanotube,   the catalyst layer is formed on a surface of the first conductive part, and   the carbon nanotube is formed on the catalyst layer and electrically connects the first conductive layer and the second conductive layer; the manufacturing method comprising the steps of:   forming a groove which exposes the first conductive part by selectively etching the interlayer insulating layer;   forming the catalyst layer which is formed by fine particles on a surface of the first conductive part in the groove part; and   forming the carbon nanotube by using one of the fine particles as a catalyst.   
     
     
         37 . A manufacturing method of a semiconductor device, the semiconductor device including
 a substrate;   an insulating layer formed on a main surface of the substrate;   a first conductive part and a second conductive part formed on the insulating layer isolated from each other;   a carbon nanotube formed between the first conductive part and the second conductive part; and   a third conductive part formed on a back surface of the substrate;   wherein an electric current flowing in the carbon nanotube is controlled by an electric voltage and an electric current applied to the third conductive part;   the manufacturing method comprising the steps of:   forming two catalyst layers, each of which is formed by the fine particles, on a surface of the insulating layer separated from each other;   forming the carbon nanotube by using one of the fine particles as a catalyst, and   forming the first conductive part and the second conductive part which respectively cover the two catalyst layers.