Semiconductor device

Abstract

A semiconductor device is disclosed, which includes a first interlayer insulating film, a lower-layer interconnection in a first groove in the first film, a second interlayer insulating film over the first film, having a normal via hole opening to the lower-layer interconnection, a normal plug in the normal hole, a third interlayer insulating film over the second film, having a second groove opening to the normal plug, an upper-layer interconnection in the second groove, and a first dummy plug in a first dummy via hole in the second film, the first dummy via hole opening to one of the lower-layer and upper-layer interconnections, wherein a short side of the first dummy plug is larger than a minimum width of a minimum width interconnection and smaller than a minimum diameter of a minimum diameter via hole and a long side is larger than a shortest length of a shortest length interconnection.

1 - 10 . (canceled) 
   
   
       11 . A semiconductor device comprising:
 a first interlayer insulating film formed on a semiconductor substrate;   a lower-layer interconnection formed in a first groove formed in the first interlayer insulating film;   a second interlayer insulating film formed on the first interlayer insulating film and the lower-layer interconnection, the second interlayer insulating film having a normal via hole, a dummy via hole, and a second groove, the normal via hole and the dummy via hole opening to the lower-layer interconnection, and the second groove opening to the normal via hole;   an upper-layer interconnection formed in the normal via hole and the second groove formed in the second interlayer insulating film; and   a dummy plug embedded in the dummy via hole formed in the second interlayer insulating film,
 wherein a short side of the dummy plug in a plan pattern is larger than a minimum width of a minimum width interconnection and smaller than a minimum diameter of a minimum diameter via hole and a long side of the dummy plug in the plan pattern is larger than a shortest length of a shortest length interconnection. 
   
   
   
       12 . A semiconductor device according to  claim 11 , wherein
 the lower-layer interconnection is formed of a first barrier metal layer and a first embedded metal layer,   the upper-layer interconnection is formed of a second barrier metal layer and a second embedded metal layer, and   the dummy plug is formed of a third barrier metal layer and a third embedded metal layer.   
   
   
       13 . A semiconductor device according to  claim 12 , wherein the barrier metal layer of the lower-layer interconnection, the barrier metal layer of the upper-layer interconnection, and the barrier metal layer of the plug is made of Ti or TiN. 
   
   
       14 . A semiconductor device according to  claim 12 , wherein the embedded metal layer of the lower-layer interconnection, the embedded metal layer of the upper-layer interconnection, and the embedded metal layer of the plug is made of Cu, Al, Ag, or W. 
   
   
       15 . A semiconductor device according to  claim 12 , wherein the embedded metal layer of the lower-layer interconnection, the embedded metal layer of the upper-layer interconnection, and the embedded metal layer of the plug are made of a material in which principal component is Cu. 
   
   
       16 . A semiconductor device comprising:
 a first interlayer insulating film formed on a semiconductor substrate;   a first plug formed in a first via hole formed in the first interlayer insulating film;   a second interlayer insulating film formed on the first interlayer insulating film and the first plug;   a normal interconnection formed in a first groove formed in the second interlayer insulating film and connected to the first plug;   a second plug formed on the normal interconnection formed in the second interlayer insulating film; and   a dummy interconnection formed in a second groove formed in a region of the second interlayer insulating film, which corresponds to other region than those where the first plug and the second plug are formed, the dummy interconnection being connected to a first embedded metal of the normal interconnection,
 wherein the dummy interconnection has a width which is smaller than a minimum width of a minimum width interconnection. 
   
   
   
       17 . A semiconductor device according to  claim 16 , wherein
 the normal interconnection is made of a first barrier metal layer and   the first embedded metal layer and the dummy interconnection is made of a second barrier metal layer and a second embedded metal layer.   
   
   
       18 . A semiconductor device according to  claim 17 , wherein the barrier metal layer of the normal interconnection and the barrier metal layer of the dummy interconnection are made of Ti or TiN. 
   
   
       19 . A semiconductor device according to  claim 17 , wherein the embedded metal layer of the normal interconnection and the embedded metal layer of the dummy interconnection consist are made of Cu, Al, Ag, or W. 
   
   
       20 . A semiconductor device according to  claim 17 , wherein the embedded metal layer of the normal interconnection and the embedded metal layer of the dummy interconnection consist are made of a material whose principal component is Cu.