Semiconductor device and fabrication method of the semiconductor device

Abstract

A semiconductor device and its manufacturing method, the semiconductor device comprising: a semi-insulating substrate 11 in which an electrode ( 12 ) is formed on a surface ( 11 a ) of one side and in which an aperture ( 11 c ) passed through from the surface 11 a of one side to a surface ( 11 b ) of another side is formed; and a conductive layer ( 17 ) formed in an inner surface of the aperture ( 11 c ), and electrically connected with the electrode ( 12 ); wherein the aperture ( 11 c ) has a tapered region ( 11 d ) where an inside diameter of a part located in the surface ( 11 b ) of another side is larger than an inside diameter of a part located in the surface ( 11 a ) of one side.

1 . A semiconductor device comprising:
 a semi-insulating substrate composed of GaN or SiC in which an electrode is formed on a surface of one side and in which a VIA hole passed through from the surface of one side to a surface of another side is formed; and   a conductive layer formed in an inner surface of the VIA hole, and electrically connected with the electrode, wherein   an inside diameter of a part located in the surface of the another side of the VIA hole is larger than an inside diameter of a part located in the surface of one side.