US2010236920A1PendingUtilityA1

Deposition apparatus with high temperature rotatable target and method of operating thereof

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Assignee: APPLIED MATERIALS INCPriority: Mar 20, 2009Filed: Mar 20, 2009Published: Sep 23, 2010
Est. expiryMar 20, 2029(~2.6 yrs left)· nominal 20-yr term from priority
Inventors:Joachim MuellerRoland TrasslJian Liu
C23C 14/3407C23C 14/35C23C 14/541H01J 37/342H01J 37/3426H01J 37/3435H01J 2237/2001
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Claims

Abstract

A deposition apparatus and a method for sputtering material on a substrate is provided with a substrate holder for holding the substrate, a rotatable target adapted for being sputtered, and a heating system including a back side heating for heating the substrate from the back and a front side heating for heating the substrate from the front. The rotatable target acts as the front side heating and is adapted for heating the substrate to a temperature of at least 100° C. A method for performing this method is disclosed.

Claims

exact text as granted — not AI-modified
1 . A deposition apparatus for sputtering material on a substrate, the deposition apparatus comprising:
 a substrate holder for holding the substrate;   a rotatable target adapted for being sputtered;   a heating system comprising:
 a back side heating for heating the substrate from the back; and 
 a front side heating for heating the substrate from the front; 
   wherein the rotatable target acts as the front side heating; and,   wherein the front side heating is adapted for heating the substrate to a temperature of at least 100° C.   
     
     
         2 . The deposition apparatus according to  claim 1 , wherein the front side heating is adapted for heating the substrate to a temperature of at least 200° C. 
     
     
         3 . The deposition apparatus according to  claim 1 , wherein the front side heating is adapted for heating the substrate to a temperature of at least 300° C. 
     
     
         4 . The deposition apparatus according to  claim 1 , wherein the rotatable target comprises a target tube and a magnetic device. 
     
     
         5 . The deposition apparatus according to  claim 1 , further comprising:
 a cooling system arranged within the rotatable target for cooling the interior of the target.   
     
     
         6 . The deposition apparatus according to  claim 5 , wherein the cooling system is adapted for keeping the magnetic device at a temperature of less than 80° C. 
     
     
         7 . The deposition apparatus according to  claim 5 , further comprising:
 a control feedback loop for controlling the cooling system of the rotatable target.   
     
     
         8 . The deposition apparatus according to  claim 1 , wherein the heating system further comprises:
 an exterior heating system that is arranged in front of the deposition apparatus.   
     
     
         9 . The deposition apparatus according to  claim 1 , further comprising:
 at least one further rotatable targets, the rotatable target and the at least one further rotatable target acting as front side heating.   
     
     
         10 . The deposition apparatus according to  claim 1 , further comprising:
 a cooling system attached to the deposition apparatus.   
     
     
         11 . A deposition apparatus for sputtering material on a substrate comprising:
 a substrate holder for holding the substrate;   a rotatable target adapted for being sputtered; and,   a heating system including a back side heating for heating the substrate from the back and a front side heating for heating the substrate from the front, wherein the rotatable target acts as the front side heating and is adapted for increasing the substrate's temperature by an increment of at least 100° C.   
     
     
         12 . The deposition apparatus according to  claim 11 , further comprising:
 a cooling system arranged within the rotatable target for cooling the interior of the target.   
     
     
         13 . The deposition apparatus according to  claim 12 , wherein the cooling system is adapted for keeping the magnetic device at a temperature of less than 80° C. 
     
     
         14 . The deposition apparatus according to  claim 11 , adapted for depositing a layer on a wafer. 
     
     
         15 . A method for depositing a layer of depositing material on a substrate in a deposition apparatus, the method comprising:
 holding a substrate;   rotating a rotatable target;   sputtering material on the substrate;   heating the substrate to a temperature of at least 100° C. by heating the substrate from the front side; and,   using the target for heating the substrate from the front.   
     
     
         16 . The method for depositing a layer on a substrate according to  claim 15 , wherein the substrate is heated to a temperature of at least 200° C. 
     
     
         17 . The method for depositing a layer on a substrate according to  claim 15 , wherein the substrate is heated to a temperature of at least 300° C. 
     
     
         18 . The method for depositing a layer on a substrate according to  claim 15 , further comprising:
 cooling an interior of the target.   
     
     
         19 . The method for depositing a layer on a substrate according to  claim 15 , further comprising:
 operating a magnetic device positioned within the rotatable target; and,   keeping the magnetic device at a temperature of less than 80° C.   
     
     
         20 . The method for depositing a layer on a substrate according to  claim 15 , further comprising:
 heating the substrate prior to feeding the substrate to the deposition apparatus.   
     
     
         21 . The method for depositing a layer on a substrate according to  claim 15 , further comprising:
 cooling the deposition apparatus.   
     
     
         22 . The method for depositing a layer on a substrate according to  claim 15 , wherein the substrate is a wafer. 
     
     
         23 . A method for depositing a layer of depositing material on a substrate in a deposition apparatus, the method comprising:
 holding the substrate;   rotating a rotatable target;   sputtering material on the substrate;   increasing the temperature of the substrate by an increment of at least 100° C. by a front side heating; and,   using the rotatable target for heating the substrate from the front.   
     
     
         24 . The method for depositing a layer on a substrate according to  claim 23 , further comprising:
 cooling the interior of the target.   
     
     
         25 . The method for depositing a layer on a substrate according to  claim 23 , further comprising:
 operating a magnetic device positioned within the rotatable target; and,   keeping the magnetic device at a temperature of less than 80° C.

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