Chemical vapor deposition reactor having multiple inlets

Abstract

A chemical vapor deposition reactor has a wafer carrier which cooperates with a chamber of the reactor to facilitate laminar flow of reaction gas within the chamber and a plurality of injectors configured in flow controllable zones so as to mitigate depletion.

1 . A chemical vapor deposition reactor comprising:
 a chamber containing a rotatable wafer carrier; wherein generally laminar flow of gas is effected intermediate a portion of the chamber and the wafer carrier wherein the wafer carrier and the chamber cooperate to define a generally flat, continuous and unobstructed flow channel;   a ring diffuser disposed proximate a periphery of the wafer carrier wherein laminar flow is enhanced from a reaction gas inlet formed generally centrally in the chamber to the ring diffuser; and   a ring seal, wherein the ring seal is disposed around the rotatable wafer carrier to bridge the flow channel.   
     
     
         2 . The reactor as recited in  claim 1 , wherein the chamber is defined by a cylinder. 
     
     
         3 . The reactor as recited in  claim 1 , wherein the ring diffuser is comprised of at least one of SiC coated graphite, SiC quartz, or molybdenum. 
     
     
         4 . The reactor as recited in  claim 1 , wherein:
 a reaction gas inlet is formed generally centrally in the chamber;   a plurality of reaction gas outlets are formed in the chamber;   the wafer carrier is disposed within the chamber below the gas outlets so as to define a flow channel intermediate a top of the chamber and the wafer carrier such that reaction gas flows into the chamber through the reaction gas inlet, through the chamber via the flow channel, and out of the chamber via the reaction gas outlet; and   the ring diffuser further comprises:
 a substantially hollow annulus having an inner surface and an outer surface; 
 a plurality of openings formed in the inner surface; 
 a plurality of openings formed in the outer surface; and 
   wherein openings in the inner surface enhance uniformity of reaction gas flow over the wafer carrier.