Semiconductor device, transmission system, method for manufacturing semiconductor device, and method for manufacturing transmission system

Abstract

Disclosed herein is a semiconductor device including: a semiconductor circuit element configured to process an electrical signal having a predetermined frequency; and a transmission line configured to be connected to the semiconductor circuit element via a wire and transmit the electrical signal. An impedance matching pattern having a symmetric shape with respect to a direction of the transmission line is provided in the transmission line.

1 . A semiconductor device comprising:
 a semiconductor circuit element configured to process an electrical signal having a predetermined frequency; and   a transmission line configured to be connected to the semiconductor circuit element via a wire and transmit the electrical signal, wherein   an impedance matching pattern having a symmetric shape with respect to a direction of the transmission line is provided in the transmission line.   
     
     
         2 . The semiconductor device according to  claim 1 , wherein
 the transmission line is provided on the semiconductor circuit element.   
     
     
         3 . The semiconductor device according to  claim 1 , wherein
 the impedance matching pattern has a circular shape symmetric with respect to the direction of the transmission line.   
     
     
         4 . The semiconductor device according to  claim 1 , wherein
 a resonant frequency of the impedance matching pattern is shifted depending on distance between one end of the transmission line and the impedance matching pattern, and the electrical signal having a desired frequency is transmitted.   
     
     
         5 . The semiconductor device according to  claim 1 , wherein
 the semiconductor circuit element is covered by an insulating protective member having a predetermined dielectric constant, and   a resonant frequency of the impedance matching pattern is shifted depending on the dielectric constant of the protective member, and the electrical signal having a desired frequency is transmitted.   
     
     
         6 . The semiconductor device according to  claim 1 , wherein
 the predetermined frequency is in a millimeter-wave band.   
     
     
         7 . The semiconductor device according to  claim 1 , wherein
 a plurality of grounding electrodes are provided for the transmission line, and   the plurality of grounding electrodes are provided symmetrically with respect to the direction of the transmission line.   
     
     
         8 . A transmission system comprising:
 a first semiconductor device configured to include a first semiconductor circuit element that processes an electrical signal having a predetermined frequency, a first transmission line that is connected to the first semiconductor circuit element via a wire and transmits the electrical signal, and a first antenna part that converts the electrical signal transmitted from the first transmission line to an electromagnetic wave signal and sends the electromagnetic wave signal; and   a second semiconductor device configured to include a second antenna part that receives the electromagnetic wave signal sent from the first antenna part and converts the electromagnetic wave signal to an electrical signal having the predetermined frequency, a second transmission line that transmits the electrical signal arising from conversion by the second antenna part, and a second semiconductor circuit element that is connected to the second transmission line via a wire and processes the electrical signal transmitted by the second transmission line, wherein   impedance matching patterns having symmetric shapes with respect to directions of the first and second transmission lines are provided in the first and second transmission lines.   
     
     
         9 . The transmission system according to  claim 8 , further comprising
 a dielectric transmission path configured to be provided between the first semiconductor device and the second semiconductor device and have a predetermined dielectric constant, the dielectric transmission path transmitting the electrical signal from the first semiconductor device to the second semiconductor device.   
     
     
         10 . The transmission system according to  claim 9 , wherein
 a viscoelastic member having a predetermined dielectric constant is provided between the first and second semiconductor devices and the dielectric transmission path.   
     
     
         11 . The transmission system according to  claim 9 , wherein
 at least one dielectric material among an acrylic resin-based material, a urethane resin-based material, an epoxy resin-based material, a silicone-based material, and a polyimide-based material is used.   
     
     
         12 . The transmission system according to  claim 8 , wherein
 the predetermined frequency is in a millimeter-wave band.   
     
     
         13 . The transmission system according to  claim 8 , wherein
 a plurality of grounding electrodes are provided for the transmission line, and   the plurality of grounding electrodes are provided symmetrically with respect to the direction of the transmission line.   
     
     
         14 . A method for manufacturing a semiconductor device, the method comprising the steps of:
 forming a semiconductor circuit element that processes an electrical signal having a predetermined frequency;   forming, on a substrate, a transmission line that transmits the electrical signal and an impedance matching pattern having a symmetric shape with respect to a direction of the transmission line;   setting the semiconductor circuit element on the substrate; and   connecting the transmission line to the semiconductor circuit element via a wire.   
     
     
         15 . The method for manufacturing a semiconductor device according to  claim 14 , further comprising the step of
 forming an insulating protective member having a predetermined dielectric constant on the substrate.   
     
     
         16 . A method for manufacturing a transmission system, the method comprising the steps of:
 fabricating a first semiconductor device;   fabricating a second semiconductor device; and   connecting the first semiconductor device to the second semiconductor device, wherein   the step of fabricating a first semiconductor device includes the sub-steps of
 forming a first semiconductor circuit element that processes an electrical signal having a predetermined frequency, 
 forming, on a first substrate, a first transmission line that transmits the electrical signal and an impedance matching pattern having a symmetric shape with respect to a direction of the first transmission line, 
 setting the first semiconductor circuit element on the first substrate, and 
 connecting the first transmission line to the first semiconductor circuit element via a wire, and 
   the step of fabricating a second semiconductor device includes the sub-steps of
 forming a second semiconductor circuit element that processes an electrical signal having a predetermined frequency, 
 forming, on a second substrate, a second transmission line that transmits the electrical signal and an impedance matching pattern having a symmetric shape with respect to a direction of the second transmission line, 
 setting the second semiconductor circuit element on the second substrate, and 
 connecting the second transmission line to the second semiconductor circuit element via a wire. 
   
     
     
         17 . The method for manufacturing a transmission system according to  claim 16 , further comprising the step of
 forming, between the first semiconductor device and the second semiconductor device, a dielectric transmission path that has a predetermined dielectric constant and transmits the electrical signal from the first semiconductor device to the second semiconductor device.   
     
     
         18 . The method for manufacturing a transmission system according to  claim 17 , further comprising the step of
 forming a viscoelastic member having a predetermined dielectric constant between the first and second semiconductor devices and the dielectric transmission path.