Solid-state imaging device, electronic equipment and manufacturing method of the solid-state imaging device

Abstract

Disclosed herein is a solid-state imaging device including, active elements configured to handle the charge captured in a photoreceiving region, an element isolation region configured to isolate regions of the active element, a first impurity region configured to surround the element isolation region, and a second impurity region including an impurity region lower in impurity concentration than the first impurity region, the second impurity region being provided between the first impurity region and active elements.

1 . A solid-state imaging device comprising:
 active elements configured to handle the charge captured in a photoreceiving region;   an element isolation region configured to isolate regions of the active element;   a first impurity region configured to surround the element isolation region; and   a second impurity region including an impurity region lower in impurity concentration than the first impurity region, the second impurity region being provided between the first impurity region and active elements.   
   
   
       2 . The solid-state imaging device of  claim 1 , wherein
 the active elements are transistors, and   a third impurity region is provided around at least either of the source and drain of one of the transistors.   
   
   
       3 . The solid-state imaging device of  claim 1 , wherein
 one of the active elements is a transistor adjacent to a doped section configured to convert the charge captured in the photoreceiving region to a voltage.   
   
   
       4 . The solid-state imaging device of  claim 1 , wherein
 the active elements are transistors adjacent to the photoreceiving region.   
   
   
       5 . Electronic equipment comprising:
 a solid-state imaging device configured to output an electric signal according to the amount of light received; and   a signal processor configured to process the electric signal output from the solid-state imaging device, the solid-state imaging device including
 active elements configured to handle the charge captured in a photoreceiving region, 
 an element isolation region configured to isolate regions of the active element, 
 a first impurity region configured to surround the element isolation region, and 
 a second impurity region, the second impurity region including an impurity region lower in impurity concentration than the first impurity region, the second impurity region being provided between the first impurity region and active elements. 
   
   
   
       6 . A manufacturing method of a solid-state imaging device comprising the steps of:
 forming an impurity region around active element forming regions and forming an element isolation region inside the impurity region; and   forming a mask having an opening inside the active element forming regions and doping the active element forming regions with an impurity to form active elements.