Method of producing semiconductor device

Abstract

A semiconductor device includes a semiconductor substrate having an internal circuit; an electrode pad electrically connected to the internal circuit; an insulating film having a through hole exposing the electrode pad; and a re-distribution wiring pattern formed on the insulating film and electrically connected to the electrode pad. The semiconductor device further includes a recess groove formed in the insulating film around and adjacent to the re-distribution wiring pattern.

1 . A method of producing a semiconductor device, comprising the steps of:
 forming an electrode pad electrically connected to an internal circuit formed in a semiconductor substrate;   forming an insulating film with an insulating resin material with photosensitivity;   forming a through hole reaching the electrode pad through a process of exposing and developing the insulating film;   forming a metal base layer on the insulating film and the electrode pad exposed at a bottom of the through hole;   forming a re-distribution wiring pattern on the base metal layer so that the re-distribution wiring pattern is connected to the electrode pad and extends on the insulating film;   forming a resist mask so that the re-distribution wiring pattern in an electrode forming area is exposed;   forming a post electrode on the re-distribution wiring pattern through an electro plating method with the base metal layer as a common electrode; and   forming a recess groove in the insulating film around the re-distribution wiring pattern so that the recess groove is disposed adjacent to the re-distribution wiring pattern.   
     
     
         2 . The method of producing the semiconductor device according to  claim 1 , wherein said recess groove has a depth smaller than a thickness of the insulating film. 
     
     
         3 . The method of producing the semiconductor device according to  claim 1 , wherein said recess groove is disposed adjacent to the re-distribution wiring pattern. 
     
     
         4 . The method of producing the semiconductor device according to  claim 1 , wherein said recess groove is disposed in an area between the re-distribution wiring pattern and an adjacent re-distribution wiring pattern. 
     
     
         5 . The method of producing the semiconductor device according to  claim 1 , wherein said insulating film is formed of an insulating resin material with photosensitivity. 
     
     
         6 . The method of producing the semiconductor device according to  claim 1 , further comprising the step of forming a metal base layer, said re-distribution wiring pattern being formed on the insulating film with the metal base layer inbetween. 
     
     
         7 . The method of producing the semiconductor device according to  claim 1 , further comprising the step of forming a post electrode on the re-distribution wiring pattern.