US2010219538A1PendingUtilityA1

Semiconductor device and method of manufacturing the same

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Assignee: TOSHIBA KKPriority: Apr 4, 2007Filed: May 10, 2010Published: Sep 2, 2010
Est. expiryApr 4, 2027(~0.7 yrs left)· nominal 20-yr term from priority
Inventors:Masaru KitoHideaki AochiTakayuki Okamura
H10P 50/696H10P 50/695H10B 41/35
46
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Claims

Abstract

A semiconductor device comprises a semiconductor layer including a plurality of paralleled linear straight sections extending in a first direction. The layer also includes a plurality of connecting sections each having a width in the first direction sufficient to form a wire-connectable contact therein and arranged to connect between adjacent ones of the straight sections in a second direction. The connecting sections have respective ends formed aligned with a first straight line parallel to the second direction.

Claims

exact text as granted — not AI-modified
1 . A semiconductor device, comprising:
 a semiconductor layer including a plurality of paralleled linear straight sections extending in a first direction and a plurality of connecting sections each having a width in said first direction sufficient to form a wire-connectable contact therein and arranged to connect between adjacent ones of said straight sections in a second direction,   wherein said connecting sections have respective ends formed aligned with a first straight line parallel to said second direction.   
   
   
       2 . The semiconductor device according to  claim 1 , wherein said straight sections are formed as derived from linear sidewall films formed along sidewalls of paralleled hard masks. 
   
   
       3 . The semiconductor device according to  claim 1 , wherein said straight sections and said connecting section are formed so as to configure an H-shaped form with said straight sections and said connecting section. 
   
   
       4 . The semiconductor device according to  claim 1 , wherein said straight sections and said connecting section are formed so as to configure a closed-loop form with said straight sections and said connecting section. 
   
   
       5 . The semiconductor device according to  claim 1 , wherein said straight sections are formed with a line width of ½ of the minimum line width. 
   
   
       6 . The semiconductor device according to  claim 1 , wherein said connecting sections are formed with a line width of 3/2 of the minimum line width.

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