FIC Installation and Method for Operating a FIC Installation in the Pressure Range Above Atmospheric Pressure

Abstract

A method of Fluoride Ion Cleaning (FIC) of a component is provided. A FIC installation includes a reaction chamber and a reactive gas or a reactive gas mixture. A pressure of the reactive gas or the reactive gas mixture in the reaction chamber is set at least occasionally above atmospheric pressure, wherein the pressure in the reaction chamber is periodically lowered and raised.

1 - 35 . (canceled) 
   
   
       36 . A process for Fluoride Ion Cleaning (FIC) of a component, comprising:
 providing a FIC installation with a reaction chamber and a reactive gas or a reactive gas mixture;   setting a pressure of the reactive gas or the reactive gas mixture in the reaction chamber at least occasionally above atmospheric pressure; and   periodically lowering and raising the pressure in the reaction chamber.   
   
   
       37 . The process as claimed in  claim 36 , wherein the pressure in the reaction chamber is at least occasionally between atmospheric pressure and 1.4 bar (140 kPa). 
   
   
       38 . The process as claimed in  claim 36 , wherein the pressure in the reaction chamber is occasionally constant, the constant pressure time being between 4 min and 10 min. 
   
   
       39 . The process as claimed in  claim 36 , wherein the pressure in the reaction chamber is occasionally below atmospheric pressure, the pressure below atmospheric pressure lasting between 5 min and 10 min. 
   
   
       40 . The process as claimed in  claim 36 , wherein the pressure in the reaction chamber is above atmospheric pressure for 25 min to 65 min. 
   
   
       41 . The process as claimed in  claim 36 , wherein a high-pressure phase comprises a higher pressure than a low-pressure phase, and wherein during the high-pressure phase the reaction chamber is purged with the reactive gas or the reactive gas mixture representing a crack-cleaning phase. 
   
   
       42 . The process as claimed in  claim 36 , wherein during the high-pressure phase the component is purged only with a non-reactive gas representing a crack-purging phase. 
   
   
       43 . The process as claimed in  claim 42 , wherein a flow rate of the non-reactive gas is reduced during the high-pressure phase between two values, when a flow rate of the reactive gas mixture or of the reactive gas is above zero (>0). 
   
   
       44 . The process as claimed in  claim 41 , wherein the pressure below atmospheric pressure is lowered to a low-pressure phase, wherein purging is carried out only with a non-reactive gas representing a chamber-purging phase. 
   
   
       45 . The process as claimed in  claim 41 , wherein one crack-cleaning phase lasts 45 min. 
   
   
       46 . The process as claimed in  claim 44 , wherein the chamber-purging phase lasts 5 min. 
   
   
       47 . The process as claimed in  claim 36 , wherein the reaction chamber is drained during various phases. 
   
   
       48 . The process as claimed in  claim 42 , wherein the non-reactive gas comprises hydrogen. 
   
   
       49 . The process as claimed in  claim 36 , further comprising:
 annealing the component in a vacuum after a cleaning treatment in the reaction chamber,   wherein the annealing is carried out at the γ′-solution annealing temperature of a material used for the component, and   wherein the annealing lasts for at least two hours.   
   
   
       50 . The process as claimed in  claim 36 , wherein a temperature is kept constant in the reaction chamber except during heating at the start of the process and cooling at the end of the process. 
   
   
       51 . The process as claimed in  claim 36 , wherein the reaction chamber is continuously purged with hydrogen, and wherein the reaction chamber is continuously drained. 
   
   
       52 . The process as claimed in  claim 36 , wherein the reactive gas mixture comprises from 18% by volume to 30% by volume a hydrogen halide. 
   
   
       53 . The process as claimed in  claim 36 , wherein the reactive gas mixture or the reactive gas is impinged on the cracks in the component at a temperature of 980° C. to 1100° C. 
   
   
       54 . The process as claimed in  claim 36 , further comprising:
 precleaning the component in a salt bath.   
   
   
       55 . The process as claimed in  claim 36 , wherein, after using the reactive gas mixture, a reducing gas is used at the end of the high-pressure phase.