Substrate processing apparatus

Abstract

Provided is a substrate processing apparatus. The apparatus comprises: a process chamber configured to accommodate substrates which are horizontally oriented and stacked in multiple stages and process the substrates; a process gas supply unit configured to supply a process gas to the process chamber; an inert gas supply unit configured to supply an inert gas to the process chamber; and an exhaust unit configured to exhaust the process chamber. The process gas supply unit comprises a process gas supply nozzle. The inert gas supply unit comprises inert gas supply nozzles disposed at both sides of the process gas supply nozzle. Each of the inert gas supply nozzles comprises at least one first inert gas ejection hole formed in a region where the substrates are stacked and at least one second inert gas ejection hole formed in a region where the substrates are not stacked.

1 . A substrate processing apparatus comprising:
 a process chamber configured to accommodate and process substrates which are horizontally oriented and stacked in multiple stages;   a process gas supply unit configured to supply a process gas to the process chamber;   an inert gas supply unit configured to supply an inert gas to the process chamber; and   an exhaust unit configured to exhaust the process chamber,   wherein the process gas supply unit comprises a process gas supply nozzle extending along an inner wall of the process chamber in a stacked direction of the substrates so as to supply the process gas to the process chamber,   the inert gas supply unit comprises inert gas supply nozzles which extend along the inner wall of the process chamber in the stacked direction of the substrates and are disposed at both sides of the process gas supply nozzle along a circumferential direction of the substrates, so as to supply the inert gas to the process chamber, and   each of the inert gas supply nozzles comprises at least one first inert gas ejection hole formed in a region where the substrates are stacked and at least one second inert gas ejection hole formed in a region where the substrates are not stacked.   
     
     
         2 . The substrate processing apparatus of  claim 1 , wherein the region where the substrates are not stacked comprises a region higher or lower than the region where the substrates are stacked. 
     
     
         3 . The substrate processing apparatus of  claim 1 , wherein the second inert gas ejection hole is opened toward a centerline of the substrates. 
     
     
         4 . The substrate processing apparatus of  claim 1 , further comprising:
 a heating unit configured to heat an inside atmosphere of the process chamber; and   a control unit configured to control at least the process gas supply unit, the inert gas supply unit, and the heating unit,   wherein the control unit controls the process gas supply unit and the inert gas supply unit so that the inert gas is supplied through the first inert gas ejection hole at a flowrate higher than a flowrate of the process gas, and controls the heating unit so that the inside atmosphere of the process chamber is kept at a predetermined process temperature.   
     
     
         5 . The substrate processing apparatus of  claim 1 , wherein a process temperature is set higher than a thermal decomposition temperature of the process gas. 
     
     
         6 . A substrate processing apparatus comprising:
 a substrate holding tool configured to hold substrates in a state where the substrates are horizontally oriented and stacked in multiple stages;   a process chamber configured to accommodate the substrate holding tool in which the substrates are held so as to process the substrates;   a process gas supply unit configured to supply a process gas to the process chamber;   an inert gas supply unit configured to supply an inert gas to the process chamber; and   an exhaust unit configured to exhaust the process chamber,   wherein the process gas supply unit comprises a process gas supply nozzle extending along an inner wall of the process chamber in a stacked direction of the substrates so as to supply the process gas to the process chamber,   the inert gas supply unit comprises an inert gas supply nozzle extending along the inner wall of the process chamber in the stacked direction of the substrates so as to supply the inert gas to the process chamber, and   the inert gas supply nozzle comprises at least one inert gas ejection hole formed in a region where the substrates are not stacked.   
     
     
         7 . The substrate processing apparatus of  claim 6 , wherein an insulating plate is charged in the substrate holding tool at a position lower than the substrates, and
 the at least one inert gas ejection hole is formed in a region corresponding to the insulating plate and in which the substrates are not stacked.   
     
     
         8 . The substrate processing apparatus of  claim 6 , wherein the substrate holding tool comprises a pair of upper and lower end plates and a plurality of holding members vertically installed between the upper and lower end plates, and
 the at least one inert gas ejection hole is formed in a region as high as or higher than the upper end plate and in which the substrates are not stacked.   
     
     
         9 . A substrate processing apparatus comprising:
 a process chamber configured to accommodate and process substrates which are horizontally oriented and stacked in multiple stages;   a process gas supply unit configured to supply a process gas to the process chamber;   an inert gas supply unit configured to supply an inert gas to the process chamber; and   an exhaust unit configured to exhaust the process chamber,   wherein the process gas supply unit comprises a process gas supply nozzle extending along an inner wall of the process chamber in a stacked direction of the substrates and comprising a process gas ejection hole to supply the process gas to the process chamber,   the inert gas supply unit comprises an inert gas supply nozzle which extends along the inner wall of the process chamber in the stacked direction of the substrates and is disposed adjacent to the process gas supply nozzle in a circumferential direction of the substrates, so as to supply the inert gas to the process chamber, and   the inert gas supply nozzle comprises inert gas ejection holes formed at positions higher and/or lower than a region where the process gas ejection hole is formed in the process gas supply nozzle.