US2010213617A1PendingUtilityA1
Semiconductor device and method for manufacturing the same
Est. expirySep 28, 2027(~1.2 yrs left)· nominal 20-yr term from priority
H10D 1/716H10D 1/042H10B 12/033H10B 12/00
43
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Claims
Abstract
A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes cylinder type bottom electrodes connected to a contact plug formed over a semiconductor substrate, and a supporting pattern formed between the cylinder type bottom electrodes, wherein a portion of sidewalls of the bottom electrodes is higher than the supporting pattern and the other portion of the sidewalls of the bottom electrode is lower than the supporting pattern.
Claims
exact text as granted — not AI-modified1 - 14 . (canceled)
15 . A semiconductor device comprising:
cylinder type bottom electrodes connected to a contact plug formed over a semiconductor substrate; and a supporting pattern formed between the cylinder type bottom electrodes, wherein a portion of sidewalls of the bottom electrodes is higher than the supporting pattern and the other portion of the sidewalls of the bottom electrode is lower than the supporting pattern.
16 . The semiconductor device according to claim 15 , wherein the supporting pattern is formed by using an exposure mask having a shading pattern as an etching mask, the shading pattern comprising one selected from a pad pattern, a closed curve pattern, a rectangular pattern, and combinations thereof.Join the waitlist — get patent alerts
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