US2010213473A1PendingUtilityA1

Photon-based memory device

38
Individually held — no corporate assignee on recordPriority: Aug 24, 2004Filed: Apr 29, 2010Published: Aug 26, 2010
Est. expiryAug 24, 2024(expired)· nominal 20-yr term from priority
Inventors:Terry L. Gilton
Y10S977/734Y10S977/943Y10S977/814Y10S977/95B82Y 10/00G11C 13/04G11C 13/041G11C 13/025
38
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Claims

Abstract

An optical memory cell having a material layer associated with a pixel capable of emitting and receiving light. The material layer has phosphorescent material formed therein for storing data as light received from and emitted to the pixel.

Claims

exact text as granted — not AI-modified
1 - 76 . (canceled) 
     
     
         77 . A memory cell, comprising:
 a pixel capable of emitting and receiving light; and   a material associated with said pixel, said material having photoluminescent material therein which is configured to receive light from and emit light to said pixel.   
     
     
         78 . The memory cell of  claim 77 , wherein said pixel includes a light emitting element and a light receiving element. 
     
     
         79 . The memory cell of  claim 78 , wherein said light emitting element is a light emitting diode. 
     
     
         80 . The memory cell of  claim 78 , wherein said light receiving element is a phototransistor. 
     
     
         81 . The memory cell of  claim 78 , wherein said material layer is between said light emitting element and said light receiving element of said pixel. 
     
     
         82 . The memory cell of  claim 77 , wherein said phosphorescent material consists of copper activated polycrystalline zinc sulfides. 
     
     
         83 . The memory cell of  claim 77 , wherein said phosphorescent material consists of rare earth doped alkaline earth sulfides. 
     
     
         84 . The memory cell of  claim 77 , wherein said phosphorescent material consists of organic dyes. 
     
     
         85 . The memory cell of  claim 84 , wherein said organic dyes consists of bis(2-phenyl-benzoimiazole)acetylacetonato iridium. 
     
     
         86 . The memory cell of  claim 77 , wherein said material layer has a thickness in the range from about 1000 Å to about 2000 Å. 
     
     
         87 . The memory cell of  claim 77 , wherein said phosphorescent material is located within each of a plurality of nanotubes formed in said material layer. 
     
     
         88 . The memory cell of  claim 87 , wherein said nanotubes are substantially perpendicular relative to said pixel. 
     
     
         89 . The memory cell of  claim 87 , wherein said nanotubes have a length in the range from about 50 Å to about 150 Å. 
     
     
         90 . The memory cell of  claim 87 , wherein said nanotubes are substantially straight. 
     
     
         91 . The memory cell of  claim 87 , wherein said nanotubes contain bends and turns. 
     
     
         92 . The memory cell of  claim 77 , further comprising a light emitting layer over said material layer. 
     
     
         93 . The memory cell of  claim 92 , wherein said light emitting layer includes a plurality of light emitting diodes. 
     
     
         94 . The memory cell of  claim 92 , further comprising a transparent element between said memory cell and said light emitting layer. 
     
     
         95 . The memory cell of  claim 77 , further comprising a laser over said material layer. 
     
     
         96 . The memory cell of  claim 77 , wherein the photoluminescent material is localized above the pixel. 
     
     
         97 . The memory cell of  claim 77 , wherein the material associated with the pixel has nanotubes formed therein, the nanotubes including the photoluminescent material. 
     
     
         98 . The memory cell of  claim 77 , wherein the photoluminescent material comprises phosphorescent material. 
     
     
         99 . The memory cell of  claim 97 , wherein the nanotubes are at an angle relative to the pixel. 
     
     
         100 . The memory cell of  claim 77 , wherein the photoluminescent material is over the pixel. 
     
     
         101 . The memory cell of  claim 77 , wherein the material associated with the pixel comprises a material doped with the photoluminescent material. 
     
     
         102 . The memory cell of  claim 77 , further comprising a light emitting device configured to be in light communication with the photoluminescent material. 
     
     
         103 . The memory cell of  claim 102 , wherein the light emitting device is integral to a memory die containing the memory cell. 
     
     
         104 . The memory cell of  claim 102 , further comprising a transparent element located between the light emitting device and the photoluminescent material. 
     
     
         105 . The memory cell of  claim 77 , wherein the photoluminescent material comprises a photoluminescent region of the material associated with the pixel, wherein the photoluminescent region is part of a pattern of separated photoluminescent regions, wherein each of the regions are positioned above a respective pixel. 
     
     
         106 . A memory cell, comprising:
 a light emitting element configured to selectively emit a photon;   photoluminescent material configured to absorb a photon emitted by the light emitting element and to reradiate a photon; and   a light receiving element configured to receive a photon reradiated by the photoluminescent material.   
     
     
         107 . The memory cell of  claim 106 , wherein the light emitting element and the light receiving element together comprise a pixel. 
     
     
         108 . The memory cell of  claim 106 , wherein the light receiving element is further configured to read a photon reradiated by the photoluminescent material when the light receiving element is activated. 
     
     
         109 . The memory cell of  claim 108 , wherein the light receiving element is further configured to produce a detectable electrical signal responsive to reading a photon reradiated by the photoluminescent material. 
     
     
         110 . The memory cell of  claim 106 , wherein the photoluminescent material is in a material layer associated with the light emitting element and the light receiving element. 
     
     
         111 . The memory cell of  claim 106 , wherein the photoluminescent material is in a nanotube. 
     
     
         112 . The memory cell of  claim 106 , wherein the photoluminescent material is between the light emitting element and the light receiving element. 
     
     
         113 . The memory cell of  claim 106 , wherein the photoluminescent material is localized above the light emitting element and the light receiving element. 
     
     
         114 . The memory cell of  claim 106 , wherein the light receiving element is provided in a semiconductor substrate. 
     
     
         115 . The memory cell of  claim 106 , wherein the light emitting element is provided in an epitaxial semiconductor. 
     
     
         116 . The memory cell of  claim 106 , wherein the light receiving element and the light transmitting element are substantially aligned with one another. 
     
     
         117 . The memory cell of  claim 106 , wherein the photoluminescent material is provided in a region positioned respective to the light emitting element and the light receiving element. 
     
     
         118 . The memory cell of  claim 117 , wherein the region is separated from a plurality of other photoluminescent regions.

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