Semiconductor device and method of fabricating the same

Abstract

A semiconductor device according to an embodiment of the present invention includes: a semiconductor substrate; an isolation structure formed in a trench, formed in the semiconductor substrate, through a semiconductor oxide film; a floating gate formed on the semiconductor substrate between the isolation structures through an insulating film; a gate oxidation protection film formed on a side surface, on the isolation structure side, of the floating gate so that each of a part of a side surface and a bottom surface of the gate oxidation protection film contacts the insulating film; and a control gate formed on the floating gate through an inter-gate insulating film.

1 . A semiconductor device, comprising:
 a semiconductor substrate;   an isolation structure formed in a trench, formed in the semiconductor substrate, through a semiconductor oxide film;   a floating gate formed on the semiconductor substrate between the isolation structures through an insulating film;   a gate oxidation protection film formed on a side surface, on the isolation structure side, of the floating gate so that each of a part of a side surface and a bottom surface of the gate oxidation protection film contacts the insulating film; and   a control gate formed on the floating gate through an inter-gate insulating film.   
   
   
       2 . The semiconductor device according to  claim 1 , wherein the gate oxidation protection film includes at least one of a silicon oxide, a silicon nitride and a silicon oxynitride. 
   
   
       3 . The semiconductor device according to  claim 1 , wherein the isolation structure includes a silicon oxide. 
   
   
       4 . The semiconductor device according to  claim 1 , wherein the insulating film includes at least one of a silicon oxide and a silicon nitride. 
   
   
       5 . The semiconductor device according to  claim 1 , wherein the inter-gate insulating film includes at least one of a silicon oxide and a silicon nitride. 
   
   
       6 - 20 . (canceled)